Frontiers of Optoelectronics, 2008, 1 (1): 147, 网络出版: 2012-11-06  

Growth of phosphorus-doped p-type ZnO thin films by MOCVD

Growth of phosphorus-doped p-type ZnO thin films by MOCVD
作者单位
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
基本信息
DOI: 10.1007/s12200-008-0024-2
中图分类号: --
栏目:
项目基金: This work was supported by the National Natural Science Foundation of China (Grant Nos. 50532060, 50572095, and 60340460439).
收稿日期: --
修改稿日期: --
网络出版日期: 2012-11-06
通讯作者: Zhizhen YE (yezz@zju.edu.cn)
备注: --

Zhizhen YE, Jingrui WANG, Yazhen WU, Xincui ZHOU, Fugang CHEN, Weizhong XU, Yan MIAO, Jingyun HUANG, Jianguo LV, Liping ZHU, Binghui ZHAO. Growth of phosphorus-doped p-type ZnO thin films by MOCVD[J]. Frontiers of Optoelectronics, 2008, 1(1): 147. Zhizhen YE, Jingrui WANG, Yazhen WU, Xincui ZHOU, Fugang CHEN, Weizhong XU, Yan MIAO, Jingyun HUANG, Jianguo LU, Liping ZHU, Binghui ZHAO. Growth of phosphorus-doped p-type ZnO thin films by MOCVD[J]. Frontiers of Optoelectronics, 2008, 1(1): 147.

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