Growth of phosphorus-doped p-type ZnO thin films by MOCVD

Zhizhen YE; Jingrui WANG; Yazhen WU; Xincui ZHOU; Fugang CHEN; Weizhong XU; Yan MIAO; Jingyun HUANG; Jianguo LV; Liping ZHU; Binghui ZHAO

doi:doi:10.1007/s12200-008-0024-2

Frontiers of Optoelectronics, 2008, 1 (1): 147, 网络出版: 2012-11-06

Growth of phosphorus-doped p-type ZnO thin films by MOCVD

Zhizhen YE ^*Jingrui WANG Yazhen WU Xincui ZHOU Fugang CHEN Weizhong XU Yan MIAO Jingyun HUANG Jianguo LV Liping ZHU Binghui ZHAO

作者单位

State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China

补充材料

Zhizhen YE, Jingrui WANG, Yazhen WU, Xincui ZHOU, Fugang CHEN, Weizhong XU, Yan MIAO, Jingyun HUANG, Jianguo LV, Liping ZHU, Binghui ZHAO. Growth of phosphorus-doped p-type ZnO thin films by MOCVD[J]. Frontiers of Optoelectronics, 2008, 1(1): 147. Zhizhen YE, Jingrui WANG, Yazhen WU, Xincui ZHOU, Fugang CHEN, Weizhong XU, Yan MIAO, Jingyun HUANG, Jianguo LU, Liping ZHU, Binghui ZHAO. Growth of phosphorus-doped p-type ZnO thin films by MOCVD[J]. Frontiers of Optoelectronics, 2008, 1(1): 147.