Regulation of the magnetic behavior by adjusting oxygen stoichiometry in ZrO<sub><italic>x</italic></sub> film

Huanfeng Zhu; Jing Li; Kun Chen; Xinyu Yi; Shuai Cheng; Yafei Yuan; Fuxi Gan

doi:doi:10.3788/COL201614.113101

Chinese Optics Letters, 2016, 14 (11): 113101, Published Online: Aug. 2, 2018

Regulation of the magnetic behavior by adjusting oxygen stoichiometry in ZrO_x film

Huanfeng Zhu ¹Jing Li ^1,2,*Kun Chen ¹Xinyu Yi ¹Shuai Cheng ¹Yafei Yuan ¹Fuxi Gan ¹

Author Affiliations

¹ Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China

² Key Laboratory of Micro and Nano Photonic Structure (Ministry of Education), Fudan University, Shanghai 200433, China

Figures & Tables

Fig. 1. (a) Magnetization versus magnetic field curves at RT for all samples. (b) Magnetic hysteresis loop for 8 sccm sample at temperatures of 5 and 300 K.

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Fig. 2. Wide scan XPS spectra for ZrOx films.

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Fig. 3. (a) Zr 3d XPS spectra and (b) O 1s XPS spectra for ZrOx films.

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Fig. 4. PL spectra of ZrOx films measured at RT. The inset shows an enlarged visible wavelength region of 450–580 nm.

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Fig. 5. 2×2×2 supercell of monoclinic ZrO2. The red and cyan spheres represent the O and Zr atoms, respectively. The positions of Zr atoms substituted by O atoms are denoted by 1 and 2, while the O interstitials are marked by 3 and 4.

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Fig. 6. DOS and PDOS of the (a)–(b) pure m-ZrO2, (c)–(d) 1.6%, and (e)–(f) 3% oxygen interstitial defects in m-ZrO2. The vertical dotted line stands for the Fermi level.

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Fig. 7. DOS and PDOS of m-ZrO2 with OZr concentration of (a)–(b) 3%, (c)–(d) 6%, and (e)–(f) 9%. The vertical dotted line stands for the Fermi level.

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Huanfeng Zhu, Jing Li, Kun Chen, Xinyu Yi, Shuai Cheng, Yafei Yuan, Fuxi Gan. Regulation of the magnetic behavior by adjusting oxygen stoichiometry in ZrO_x film[J]. Chinese Optics Letters, 2016, 14(11): 113101.

Regulation of the magnetic behavior by adjusting oxygen stoichiometry in ZrO_x film

Fig. 1. (a) Magnetization versus magnetic field curves at RT for all samples. (b) Magnetic hysteresis loop for 8 sccm sample at temperatures of 5 and 300 K.

Fig. 2. Wide scan XPS spectra for ZrOx films.

Fig. 3. (a) Zr 3d XPS spectra and (b) O 1s XPS spectra for ZrOx films.

Fig. 4. PL spectra of ZrOx films measured at RT. The inset shows an enlarged visible wavelength region of 450–580 nm.

Fig. 5. 2×2×2 supercell of monoclinic ZrO2. The red and cyan spheres represent the O and Zr atoms, respectively. The positions of Zr atoms substituted by O atoms are denoted by 1 and 2, while the O interstitials are marked by 3 and 4.

Fig. 6. DOS and PDOS of the (a)–(b) pure m-ZrO2, (c)–(d) 1.6%, and (e)–(f) 3% oxygen interstitial defects in m-ZrO2. The vertical dotted line stands for the Fermi level.

Fig. 7. DOS and PDOS of m-ZrO2 with OZr concentration of (a)–(b) 3%, (c)–(d) 6%, and (e)–(f) 9%. The vertical dotted line stands for the Fermi level.

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Regulation of the magnetic behavior by adjusting oxygen stoichiometry in ZrOx film

Fig. 1. (a) Magnetization versus magnetic field curves at RT for all samples. (b) Magnetic hysteresis loop for 8 sccm sample at temperatures of 5 and 300 K.

Fig. 2. Wide scan XPS spectra for ZrOx films.

Fig. 3. (a) Zr 3d XPS spectra and (b) O 1s XPS spectra for ZrOx films.

Fig. 4. PL spectra of ZrOx films measured at RT. The inset shows an enlarged visible wavelength region of 450–580 nm.

Fig. 5. 2×2×2 supercell of monoclinic ZrO2. The red and cyan spheres represent the O and Zr atoms, respectively. The positions of Zr atoms substituted by O atoms are denoted by 1 and 2, while the O interstitials are marked by 3 and 4.

Fig. 6. DOS and PDOS of the (a)–(b) pure m-ZrO2, (c)–(d) 1.6%, and (e)–(f) 3% oxygen interstitial defects in m-ZrO2. The vertical dotted line stands for the Fermi level.

Fig. 7. DOS and PDOS of m-ZrO2 with OZr concentration of (a)–(b) 3%, (c)–(d) 6%, and (e)–(f) 9%. The vertical dotted line stands for the Fermi level.

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Regulation of the magnetic behavior by adjusting oxygen stoichiometry in ZrO_x film