半导体薄膜实现Nd:YVO4 1064 nm和1342 nm双波长激光被动调Q
[1] H. Y. Shen, R. R. Zeng, Y. P. Zhou et al.. Comparison of simultaneous multiple wavelength lasing in various neodymium host crystals at transitions from 4F3/2-4I11/2 and 4F3/2-4I13/2［J］. Appl. Phys. Lett., 1990, 56(20): 1937～1938
[2] Y.-F. Chen. CW dual-wavelength operation of a diode-end-pumped Nd:YVO4 laser［J］. Appl. Phys. B, 2000, 70(4): 475～478
[3] 张强, 姚建姾, 温伍麒 等. 高功率激光二极管抽运Nd:YAG连续双波长激光器［J］. 中国激光, 2006, 33(5): 577～581
[4] 张峻诚, 王加贤, 苏培林 等. 激光二极管抽运Nd:YVO4和频黄光激光器的理论及实验研究［J］. 光学学报, 2008, 28(12): 2365～2369
[5] Yang Tan, Yuechen Jia, Feng Chen et al.. Simultaneous dual-wavelength lasers at 1064 nm and 1342 nm in femtosecond-laser-written Nd:YVO4 channel waveguides［J］. J. Opt. Soc. Am. B, 2011, 28(7): 1607～1610
[6] X. P. Hu, G. Zhao, Z. Yan et al.. High-power red-green-blue laser light source based on intermittent oscillating dual-wavelength Nd:YAG laser with a cascaded LiTaO3 superlattice［J］. Opt. Lett., 2008, 33(4): 408～410
[7] G. A. Henderson. A computational model of a dual-wavelength solid-state laser［J］. J. Appl. Phys., 1990, 68(11): 5451～5454
[8] 林文雄, 沈鸿元. 一种新型结构的Nd:YAlO3双波长调Q脉冲激光器［J］. 物理学报, 1999, 48(4): 667～672
Lin Wenxiong, Shen Hongyuan. A new configuration of the laser cavity for simultaneous dual wavelength Q-switch pulsed Nd:YAlO3 laser［J］. Acta Physica Sinica, 1999, 48(4): 667～672
[9] Y. F. Chen, Y. S. Chen, S. W. Tsai. Diode-pumped Q-switched laser with intracavity sum frequency mixing in periodically poled KTP［J］. Appl. Phys. B, 2004, 79(2): 207～210
[10] H. T. Huang, J. L. He, B. T. Zhang et al.. Intermittent oscillation of 1064 nm and 1342 nm obtained in a diode-pumped doubly passively Q-switched Nd:YVO4 laser［J］. Appl. Phys. B, 2009, 96(4): 815～820
[11] S. Furukawa, T. Miyasato. Quantum size effects on the optical band gap of microcrystalline SiH［J］. Phys. Rev. B, 1988, 33(8): 5726～5729
[12] G. V. Prakash, M. Cazzanelli, Z. Gaburro et al.. Linear and nonlinear optical properties of plasma-enhanced chemical-vapour deposition grown silicon nanocrystals［J］. J. Mod. Opt., 2002, 49(5/6): 719～730
[13] 姚伟国, 岳兰平, 戚震中 等. 镶嵌在SiO2薄膜中的锗纳米晶粒的光致发光［J］. 功能材料, 1997, 28(5): 477～488
Yao Weiguo, Yue Lanping, Qi Zhenzhong et al.. Visible photoluminescence of Ge nanocrystallites embedded in SiO2 thin film［J］. J. Functional Material, 1997, 28(5): 477～488
[14] M. Sheik-Bahae, A. A. Said, T. H. Wei et al.. Sensitive measurement of optical nonlinearities using a single beam［J］. IEEE J. Quantum Electron., 1990, 26(4): 760～769
[15] T. T. Kajava, A. L. Gaeta. Intra-cavity frequency-doubling of a Nd:YAG laser passively Q-switched with GaAs［J］. Opt. Commun., 1997, 137(1-3): 93～97
[16] A. W. Tucker, M. Birnbaum, C. L. Fincher et al.. Stimulated-emission cross section at 1064 and 1342 nm in Nd:YVO4［J］. J. Appl. Phys., 1977, 48(12): 4907～4911
[17] L. Banyai, P. Gilliot, Y. Z. Hu et al.. Surface-polarization instabilities of electron-hole pairs in semiconductor quantum dots［J］. Phys. Rev. B, 1992, 45(24): 14136～14142
[18] Ma Zhixun, Liao Xianbo, Kong Guanglin et al.. Optical properties of nanocrystalline silicon embedded in SiO2［J］. Science in China (Series A), 1999, 42(9): 995～1002
[19] 刘宁宁, 孙甲明, 潘少华 等. a-Si/SiO2超晶格结构的非线性光学性质［J］. 科学通报, 2000, 45(22): 2383～2387
Liu Ningning, Sun Jiaming, Pan Shaohua et al.. Nonlinear optical property of a-Si/SiO2 superlattice structure［J］. Chinese Science Bulletin, 2000, 45(22): 2383～2387
[20] 郭亨群, 林赏心, 王启明. 纳米Si镶嵌SiO2薄膜的发光与非线性光学特性的应用［J］. 半导体学报, 2006, 27(2): 345～349
Guo Hengqun, Lin Shangxin, Wang Qiming. Photoluminescence and application of nonlinear optical property of nc-Si-SiO2 films［J］. Chinese J. Semiconductors, 2006, 27(2): 345～349
王加贤, 王燕飞. 半导体薄膜实现Nd:YVO4 1064 nm和1342 nm双波长激光被动调Q[J]. 中国激光, 2012, 39(2): 0202008. Wang Jiaxian, Wang Yanfei. Semiconductor Film Passively Q-Switching for Dual-Wavelength Lasers at 1064 nm and 1342 nm in Nd:YVO4 Laser[J]. Chinese Journal of Lasers, 2012, 39(2): 0202008.
PDF全文
