Threshold Property of Photoresist Film for Two-photon Optical Memory

ZHANG Jiangying; MING Hai; LIANG Zhongcheng; WANG Pei; XIE Jianping; XIE Aifang; ZHANG Zebo

Chinese Journal of Lasers B, 2001, 10 (5): 365, 网络出版: 2006-08-10

Threshold Property of Photoresist Film for Two-photon Optical Memory

论文大纲

ZHANG Jiangying ¹MING Hai ¹LIANG Zhongcheng ¹WANG Pei ¹XIE Jianping ¹XIE Aifang ²ZHANG Zebo ²

作者单位

¹ Laboratory of Quantum Information and Quantum Computation, Department of Physics, University of Science and Technology of China, Hefei 230026, China

² Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

threshold property two-photon optical storage Ti:Sapphire fs laser

摘要

Abstract

Two-photon threshold property of photoresist films have been studied by changing exposure energy. When photoresist film is irradiated by Ti:Sapphire laser with wavelength 770 nm, pulse width 130 fs, repetition rate 82 MHz, the damage and recording thresholds of the material are 9.15×105 J/cm2 and below 5.57×105 J/cm2, respectively. The principle experiments of two-photon optical memory are demonstrated in photoresist film. The patterns of optical bit data storage are realized at different input power density. The corresponding 3-D tomographies of these recorded spots are scanned under near-field optical microscope.

参考文献

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ZHANG Jiangying, MING Hai, LIANG Zhongcheng, WANG Pei, XIE Jianping, XIE Aifang, ZHANG Zebo. Threshold Property of Photoresist Film for Two-photon Optical Memory[J]. Chinese Journal of Lasers B, 2001, 10(5): 365. ZHANG Jiangying, MING Hai, LIANG Zhongcheng, WANG Pei, XIE Jianping, XIE Aifang, ZHANG Zebo. [J]. 中国激光(英文版), 2001, 10(5): 365.

Threshold Property of Photoresist Film for Two-photon Optical Memory

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