激光对固态电解质金属氧化物薄膜晶体管性能的影响
[1] SPENCER J W. Firms knowledge-sharing strategies in the global innovation system: empirical evidence from the flat panel display industry [J]. Strategic Management Journal, 2003, 24(3): 217-233.
[2] FORTUNATO E, BARQUINHA P, MARTINS R. Oxide semiconductor thin-film transistors: a review of recent advances [J]. Advanced Materials, 2012, 24(22): 2945-2986.
[3] NOMURA K, OHTA H, TAKAGI A, et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J]. Nature, 2004, 432(7016): 488-492.
[4] MARTINS R F P, AHNOOD A, CORREIA N, et al. Recyclable, flexible, low-power oxide electronics [J]. Advanced Functional Materials, 2013, 23(17): 2153-2161.
[5] CAI W, NING H L, ZHU Z N, et al. Investigation of direct inkjet-printed versus spin-coated ZrO2 for sputter IGZO thin film transistor [J]. Nanoscale Research Letters, 2019, 14: 80.
[6] YABUTA H, KAJI N, HAYASHI R, et al. Sputtering formation of P-type SnO thin-film transistors on glass toward oxide complimentary circuits [J]. Applied Physics Letters, 2010, 97(7): 072111.
[7] 裴智慧,秦国轩.栅介质材料及尺寸对薄膜晶体管性能影响研究[J]. 南京大学学报: 自然科学版,2019,55(5): 740-749.
[8] 陆清茹,李帆,黄晓东.非晶铟镓锌氧化物薄膜晶体管的制备及其光敏特性研究[J]. 半导体光电,2019,40(4): 480-483.
[10] 刘翔,薛建设,贾勇,等.金属氧化物IGZO薄膜晶体管的最新研究进展[J]. 现代显示,2010(10): 28-32.
[11] BEOM K, YANG P, PARK D, et al. Single- and double-gate synaptic transistor with TaOx gate insulator and IGZO channel layer [J]. Nanotechnology, 2019, 30(2): 025203.
[12] PILLAI P B, DE SOUZA M M. Nanoionics-based three-terminal synaptic device using zinc oxide [J]. ACS Applied Materials & Interfaces, 2017, 9(2): 1609-1618.
[13] 林广庆,李鹏,王明晖,等.表面修饰制备高性能薄膜晶体管[J]. 液晶与显示,2013,28(4): 490-494.
[14] 覃金牛,温喜章,冯武昌,等.退火温度对ZnO薄膜晶体管电学性能的影响[J]. 深圳大学学报理工版,2019,36(4): 375-381.
[15] PALNEEDI H, PARK J H, MAURYA D, et al. Laser irradiation of metal oxide films and nanostructures: applications and advances [J]. Advanced Materials, 2018, 30(14): 1705148.
[16] 胡郁蓬,鲁广昊.有机半导体薄膜空间电荷分布对晶体管性能影响的研究进展[J]. 应用化学,2019,36(8): 855-881.
[17] BERMUNDO J P S, ISHIKAWA Y, FUJII M N, et al. Instantaneous semiconductor-to-conductor transformation of a transparent oxide semiconductor a-InGaZnO at 45 °C [J]. ACS Applied Materials & Interfaces, 2018, 10(29): 24590-24597.
[18] 郭晓艳,程晓琪,张良良,等.N,N-双(2-羟乙基)-2-氨基乙磺酸钠为扩链剂的磺酸型聚氨酯水凝胶制备及性能[J]. 应用化学,2019,36(6): 631-640.
杨倩, 杜世远, 边锐. 激光对固态电解质金属氧化物薄膜晶体管性能的影响[J]. 液晶与显示, 2020, 35(11): 1103. YANG Qian, DU Shi-yuan, BIAN Rui. Influence of laser irradiation on solid-electrolyte based metal-oxide thin film transistors performance[J]. Chinese Journal of Liquid Crystals and Displays, 2020, 35(11): 1103.