中国激光, 1987, 14 (4): 225, 网络出版: 2012-08-10
激光等离子体化学气相沉积掺氢非晶硅薄膜 —— 一种新的LCVD方法
Amorphous Si: H film grown by laser plasma induced chemical vapour deposition
摘要
采用一种新方法,用脉冲CO2激光器获得了掺氢非晶硅薄膜。描述了我们的实验。给出了生长速率与有关实验参数的关系和合适的工作条件;测量和分析了这种薄膜的某些性质。
Abstract
Amorphous Si: H fillm has been obtained with a pulsed CO2 laser by laser plasma induced chemical vapour deposition (LPCVD). The experiment is described and the dependance of film growth rate on the related experimental parameters and the suitable depositing condition are given. Some properties of the film were measured and analyzed.
参考文献
[1] Nelson L. S. et al.; Material Eesearch Bulletin, 1972, 17, 971.
[2] C. P. Cristensen et al., Appl. Phys. Lett., 1978, 32, 254
[3] S. D. Allen et al.; J. Appl. Phys., 1981, 52, 6501.
[4] R. Bilench et al.; J. Appl. Phys., 1982, S3, 6479.
[5] Ο plus E, 1984, 10, 41.
[6] 洪熙春；等离子体引起的球面激波, 研究生硕士论文附录B,物理所,1985
[7] J. E. Smith et al; Phys. Rev. Lett., 1971, 26, 642.
[8] J. E. Ziegler et al., Nucl. Inst. Meth., 1978, 149, 19.
李兆霖, 张泽渤, 洪熙春, 赵玉英, 王天眷. 激光等离子体化学气相沉积掺氢非晶硅薄膜 —— 一种新的LCVD方法[J]. 中国激光, 1987, 14(4): 225. Li Zhaolin, Zhang Zebo, Hong Xichun, Zhao Yuying, Wang Tianjuan. Amorphous Si: H film grown by laser plasma induced chemical vapour deposition[J]. Chinese Journal of Lasers, 1987, 14(4): 225.
PDF全文
