通过磨斜角,用光致发光法测量了GaP:N液相外延(LPE)材料中n区和p区的发光强度。从被测点的荧光谱中可以看出,n区和p区均为发光区域,但是在p-n结两侧氮(N)浓度大致相同的情况下,p区的发光强度明显高于n区的发光强度,约为n区发光强度的3～5倍。此实验结果表明,在p、n结附近杂质浓度较低情况下,GaP:N绿色发光外延材料中的发光区域主要是在p区。

By measuring photoluminescence spectra of each point along the slope of several polished GaP:N green light emitting liquid phase epitary (LPE) slices,the photoluminescence intensities of p- and n-type crystals are compared,it is found when nitrogen concentration is equal on two sides of p-n junction approximately,the main luminescence region is p-type region,though there is also light emitting from n-type region.The photoluminescence intensities in the former region are about 3 to 5 times of that in the latter region.