[1] Kamiya T,Nomura K,Hosono H. Present status of amorphous In-Ga-Zn-O thin-film transistors ［J］. Sci. Technol. Adv. Mater.,2010,11(4): 044305-1-6.

[2] Park S J,Maen W J,Kim H S,et al. Review of recent developments in amorphous oxide semiconductor thin film transistor devices ［J］. Thin Solid Films,2012,520(6): 1679-1693.

[3] Conley J F. Instabilities in amorphous oxide semiconductor thin-film transistors ［J］. IEEE Trans. Dev. Mater. Reliab.,2010,10: 460-476.

[4] Kikuchi Y,Nomura K,Yanayi H,et al. Device characteristics improvement of a-In-Ga-Zn-O TFTs by low-temperature annealing ［J］. Thin Solid Films,2010,518(11): 3017-3021.

[5] Dao V A,Trinh T T,Jang K S,et al. Trapping time characteristics of carriers in a-InGaZnO thin-film transistors fabricate ［J］. J. Electron. Mater.,2013,42(4): 711-715.

[6] Kilic C,Zunger A. N-type doping of oxides by hydrogen ［J］. Appl. Phys. Lett.,2002,81(1): 73-75.

[7] Trinh T T,Van Nguyen D,Ryu K,et al. Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer ［J］. Semicond. Sci. Technol.,2011,26(8): 085012-1-6.

[8] Park S,Bang S,Lee S,et al. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor ［J］. J. Nanosci. Nanotechnol.,2011,11: 6029-6033.

[9] Tsujimura T. Vth compensation circuit for AMOLED displays composed of two TFTs and one capacity ［J］. IEEE Xplore,2007,54(3): 462-467.

[10] Jankovic N D,Brajovic V. Vth compensated AMOLED pixel employing dual-gate TFT driver ［J］. Electron. Lett.,2011,47(7): 456-457.

[11] Dong H K,Ji U H,Mallory M,et al. Threshold voltage dependence on channel length in amorphous-indium-gallium-zinc-oxide thin-film transistors ［J］. Appl. Phys. Lett.,2013,102(8): 083508-1-3.

[12] Aoi T,Oka N,Sato Y,et al. DC sputter deposition of amorphous indium-gallium-zinc-oxide (a-IGZO) films with H2O introduction ［J］. Thin Solid Films,2010,518(11): 3004-3007.

[13] Seo D,Shin S,Cho H,et al. Drastic improvement of oxide thermoelectric performance using thermaland plasma treatments of the InGaZnO thin films grown by sputtering ［J］. Acta Materialia,2011,59: 6743-6750.

[14] Jung C H,Kim D J,Kang Y K,et al. Transparent amorphous In-Ga-Zn-O thin film as function of various gas flows for TFT applications ［J］. Thin Solid Films,2009,517(14): 4078-4081.

[15] Chiu C J,Pei Z W,Chang S T,et al. Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing ［J］. Vacuum,2011,86(3): 246-249.

[16] Chiang H Q,McFarlane B,Hong D,et al. Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors ［J］. J. Non-Cryst. Solids,2008,354: 2826-2830.

[17] Liu S,Yu M,Lin C,et al. Influence of passivation layers on characteristics of a-InGaZnO thin-film transistors ［J］. IEEE Electron Dev. Lett.,2011,32: 161-163.

[18] Antonis O,Pedro B. Insight on the SU-8 resist as passivation layer for transparent Ga2O3In2O3 ZnO thin-filmtransistors ［J］. J. Appl. Phys.,2010,108(6): 064505-1-6.

[19] Zhang G,Wang J,Xiang G H. Effect of various sputtering gas on the characteristics of a-GZO TFT ［J］. Chin. J. Electron Dev.(电子器件),2012,35(2): 125-129 (in Chinese).