质子注入型光子晶体垂直腔面发射激光器制备
蒋国庆, 徐晨, 解意洋, 荀孟, 曹亚鹏, 陈弘达. 质子注入型光子晶体垂直腔面发射激光器制备[J]. 红外与激光工程, 2016, 45(12): 1205001.
Jiang Guoqing, Xu Chen, Xie Yiyang, Xun Meng, Cao Yapeng, Chen Hongda. Fabrication of proton-implanted photonic crystal vertical cavity surface emitting laser[J]. Infrared and Laser Engineering, 2016, 45(12): 1205001.
[1] Pan J S, Lin Y S, Li C F, et al. 850 nm implanted and oxide VCSELs in multi-gigabit data communication application[C]//SPIE: Optoelectron, Mater, Devices Commun, 2001, 4580: 46-51.
[2] Kasten A M, Giannopoulos A V, Long C, et al. Fabrication and characterization of individually addressable vertical cavity surface-emitting laser arrays and integrated VCSEL/PIN detector arrays[C]//SPIE: The International Society for Optical Engineering, 2007, 6484: 64840 C.
[3] Weigl B, Grabherr M, Michalzik R, et al. High power single-mode selectively oxidized vertical-cavity surface emitting lasers[J]. IEEE Photonics Technology Letters, 1996, 8(8): 971-973.
[4] Morgan R A, Guth G D, Focht M W, et al. Transverse mode control of vertical-cavity top-surface-emitting lasers[J]. IEEE Photonics Technology Letters, 1993, 4(4): 374-377.
[5] Yokouchi N, Danner A J, Choquette K D. Two- dimensional photonic crystal confined vertical-cavity surface-emitting lasers[J]. IEEE J Sel Topics Quantum Electron, 2003, 9(5): 1439-1445.
[6] Danner A J, Raftery J J, Kim T, et al, Progress in photonic crystal vertical cavity lasers[J]. IEICE Transactions on Electronics, May, 2005, E88-C(5): 944-950.
[7] Kasten A M, Tan M P, Sulkin J D, et al. Photonic crystal vertical cavity lasers with wavelength-independent single-mode behavior[J]. IEEE Photonics Technology Letters, 2008, 20(23): 2010-2012.
[8] Yokouchi N, Danner A J, Choquette K D. Two-dimensional photonic crystal confined vertical-cavity surface-emitting lasers[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2003, 9: 1439-1445.
[9] Xie Y Y, Xu C, Kan Q, et al. A Single-fundamental-mode photonic crystal vertical cavity surface emitting laser[J]. Chinese Physics Letters, 2010, 27: 024206.
[10] Grabherr M, Jager R, Michalzik R, et al. Efficient single-mode oxide-confined GaAs VCSEL′s emitting in the 850-nm wavelength regime[J]. IEEE Photonics Technology Letters, 1997, 10(10): 1304-1306.
[11] 刘海荣, 刘德明, 柯昌剑, 等. 微结构垂直腔面发射激光器的设计[J]. 红外与激光工程, 2006, 35(S): 120-123.
Liu Hairong, Liu Deming, Ke Changjian, et al. Single transverse mode VCSELs with nano-structure[J]. Infrared and Laser Engineering, 2006, 35(S): 120-123. (in Chinse)
[12] Leisher P O, Danner A J, Raftery J J, et al. Proton implanted single mode holey vertical-cavity surface emitting lasers[J]. Electronics Letters, 2005, 41(18): 1010-1011.
[13] 毛明明, 徐晨, 魏思民, 等. 质子注入能量对垂直腔面发射激光器的阈值和功率的影响[J]. 物理学报, 2012, 61(21): 214207.
Mao Mingming, Xu Chen, Wei Simin, et al, The effects of proton implant energy on threshold and output power of vertical cavity surface emitting laser[J]. Acta Physica Sinica, 2012, 61(21): 214207. (in Chinese)
[14] 王宝强, 徐晨, 刘英明, 等. 光子晶体垂直腔面发射激光器的电流分布研究[J]. 物理学报, 2010, 59: 8542-8547.
Wang Baoqiang, Xu Chen, Liu Yingming, et al, Study on current spreading of photonic crystal vertical cavity surface emitting lasers[J]. Acta Physica Sinica, 2010, 59: 8542-8547. (in Chinese)
[15] 解意洋, 徐晨, 阚强, 等. 二维光子晶体对面发射激光器横模控制研究[J]. 红外与激光工程, 2010, 39(3): 460-463.
Xie Yiyang, Xu Chen, Kan Qiang, et al. VCSEL transverses mode control by 2D photonic crystal[J]. Infrared and Laser Engineering, 2010, 39(3): 460-463. (in Chinese)
[16] 郑婉华, 王宇飞, 周文君, 等. 超低阈值横向腔光子晶体面发射激光器[J]. 红外与激光工程, 2012, 41(12): 3198-3201.
Zheng Wanhua, Wang Yufei, Zhou Wenjun, et al. Ultralow threshold lateral cavity photonic crystal surface-emitting laser[J]. Infrared and Laser Engineering, 2012, 41(12): 3198-3201. (in Chinese)
[17] 胡春海, 郭士亮, 李欣. 带有光子晶体波导的微型随机激光器研究[J]. 红外与激光工程, 2015, 44(6): 1752-1756.
蒋国庆, 徐晨, 解意洋, 荀孟, 曹亚鹏, 陈弘达. 质子注入型光子晶体垂直腔面发射激光器制备[J]. 红外与激光工程, 2016, 45(12): 1205001. Jiang Guoqing, Xu Chen, Xie Yiyang, Xun Meng, Cao Yapeng, Chen Hongda. Fabrication of proton-implanted photonic crystal vertical cavity surface emitting laser[J]. Infrared and Laser Engineering, 2016, 45(12): 1205001.