基于标准CMOS工艺的非接触式保护环单光子雪崩二极管
吴佳骏, 谢生, 毛陆虹, 朱帅宇. 基于标准CMOS工艺的非接触式保护环单光子雪崩二极管[J]. 光子学报, 2018, 47(1): 0125001.
WU Jia-jun, XIE Sheng, MAO Lu-hong, ZHU Shuai-yu. Single Photon Avalanche Diode with Non-contact Guard Ring Based on CMOS Technology[J]. ACTA PHOTONICA SINICA, 2018, 47(1): 0125001.
[1] CHICK S, COATH R, SELLAHEWA R, et al. Dead time compensation in CMOS single photon avalanche diodes with active quenching and external reset[J]. IEEE Transactions on Electron Devices, 2014, 61(8): 2725-2731.
[2] 杨佳, 金湘亮, 杨红姣,等. 一种新型低暗计数率单光子雪崩二极管的设计与分析[J]. 红外与毫米波学报, 2016, 35(4): 394-397.
[3] HU H, ZHANG G, ZHENG K. Modeling leaf image, chlorophyll fluorescence, reflectance from SPAD readings[J]. IEEE Journal of Selected Topics in Applied Earth Observations & Remote Sensing, 2014, 7(11): 4368-4373.
[4] CHITNIS D, COLLINS S. A SPAD-based photon detecting system for optical communications[J]. Journal of Lightwave Technology, 2014, 32(10): 2028-2034.
[5] 王进军, 王晓亮, 张景文, 等. 场板结终端对金刚石SBD内部电场分布及击穿特性的影响[J]. 发光学报, 2016,37(4): 432-438.
[6] CHARBON E. Single-photon imaging in complementary metal oxide semiconductor processes.[J]. Philosophical Transactions Mathematical Physical Engineering Sciences, 2014, 372(372): 20130100.
[7] GUERRIERI F, TISA S, TOSI A, et al. Two-dimensional SPAD imaging camera for photon counting[J]. IEEE Photonics Journal, 2010,2(5): 759-774.
[8] ISAAK S, BULL S, PITTER M C, et al. Fully integrated linear single photon avalanche diode (SPAD) array with parallel readout circuit in a standard 180 nm CMOS process[C]. Proceedings of International Conference on Enabling Science and Nanotechnology, 2011: 1-2.
[9] VEERAPPAN C, CHARBON E. A low dark count p-i-n diode based SPAD in CMOS technology[J]. IEEE Transactions on Electron Devices, 2015, 63(1): 65-71.
[10] 王巍, 鲍孝圆, 陈丽,等. 高探测效率CMOS单光子雪崩二极管器件[J]. 光子学报, 2016, 45(8): 0823001.
[11] KAMRANI E, LESAGE F, SAWAN M. A low-power photon-counter front-end dedicated to NIRS brain imaging[J]. IEEE Sensors Journal, 2015, 15(7): 3724-3733.
[12] PALUBIAK D P, DEEN M J. CMOS SPADs: Design issues and research challenges for detectors, circuits, and arrays[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2014, 20(6): 409-426.
[13] SAVUSKAN V, BROUK I, JAVITT M, et al. An estimation of single photon avalanche diode (SPAD) photon detection efficiency (PDE) nonuniformity[J]. IEEE Sensors Journal, 2013, 13(5): 1637-1640.
[14] KANG Y, LU H X, LO Y H, et al. Dark count probability and quantum efficiency of avalanche photodiodes for single-photon detection[J]. Applied Physics Letters, 2003, 83(14): 2955-2957.
[15] NICLASS C, SOGA M. A miniature actively recharged single-photon detector free of afterpulsing effects with 6ns dead time in a 0.18μm CMOS technology[C]. Proceedings of Electron Devices Meeting. 2010: 14.3.1-14.3.4.
[16] PANCHERI L, STOPPA D. Low-noise single photon avalanche diodes in 0.15μm CMOS technology[C]. Proceedings of the European Solid-State Device Research Conference, 2011: 179-182.
吴佳骏, 谢生, 毛陆虹, 朱帅宇. 基于标准CMOS工艺的非接触式保护环单光子雪崩二极管[J]. 光子学报, 2018, 47(1): 0125001. WU Jia-jun, XIE Sheng, MAO Lu-hong, ZHU Shuai-yu. Single Photon Avalanche Diode with Non-contact Guard Ring Based on CMOS Technology[J]. ACTA PHOTONICA SINICA, 2018, 47(1): 0125001.