320×256 InAs/GaSb超晶格中/短波双色探测器组件研制

InAs/GaSb超晶格材料制备的新型红外器件在最近十几年得到了迅速发展。文中开展了InAs/GaSb二类超晶格中/短波双色焦平面探测器组件研制, 设计了中/短波双色叠层背靠背二极管芯片结构, 用分子束外延技术生长出结构完整、表面平整、低缺陷密度的PNP结构超晶格材料, 制备出性能优良的320×256双色焦平面探测器组件, 对探测器组件进行了测试分析。结果显示, 在77 K下中波二极管RA值达到26.0 kΩ·cm2, 短波的RA值为562 kΩ·cm2。光谱响应特性表明短波响应波段为1.7~3 μm, 中波为3~5 μm, 满足设计要求。双色峰值探测率达到中波3.12×1011 cm·Hz1/2W-1, 短波1.34×1011 cm·Hz1/2W-1。响应非均匀性中波为9.9%, 短波为9.7%。中波有效像元率为98.46%, 短波为98.06%。

Abstract

New infrared devices prepared by InAs/GaSb superlattice materials have developed rapidly in the last decade. The paper carries out practical researches on mid-/short-wavelength dual-color infrared detector based on type-II InAs/GaSb superlattice. Firstly, a mid-/short-wavelength dual-color chip structure was designed based on two back-to-back n-i-p junctions. Then the PNP superlattice material with complete structure, smooth surface and low defect density was grown by molecular beam epitaxy. Finally, 320×256 focal plane arrays with excellent performance was fabricated and measured. The RA value of middle-wave channel reached 26 kΩ·cm2 and the short-wave channel reached 562 kΩ·cm2 at 77 K. The spectral response indicated the short-wave response band of 1.7-3 μm and the middle-wave of 3-5 μm. The middle-wave channel exhibits a detectivity value of 3.12×1011 cm·Hz1/2W-1, a photo-response non-uniformity of 9.9% and an effective pixel rate of 98.46%, while the short-wave channel exhibits a detectivity value of 1.34×1011 cm·Hz1/2W-1, a photo-response non-uniformity of 9.7% and an effective pixel rate of 98.06%.

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320×256 InAs/GaSb超晶格中/短波双色探测器组件研制

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