Chinese Optics Letters, 2017, 15 (9): 091401, Published Online: Jul. 19, 2018  

Comparison of high-energy multi-pass Ti:sapphire amplifiers with a different Ti-dopant concentration Download: 930次

Author Affiliations
1 State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
2 University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100049, China
3 Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Figures & Tables

Fig. 1. (Color online) Output energy with respect to pump energy; heavily doped Ti:S case (blue line) and lightly doped Ti:S case (red line).

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Fig. 2. (Color online) Compression pulse width and B-Integral evolution versus crystal length for (a) Gaussian pulse shape and (c) second-order super-Gaussian pulse shape. Normalized intensity profile of compressed pulse for (b) Gaussian pulse shape and (d) second-order super-Gaussian pulse shape.

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Fig. 3. (a) Multi-pulse pump generation. (b) Schematic of three-pulse pump scheme. (c) Signal-pump time-delay control.

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Fig. 4. (Color online) (a) Transverse gain and amplified energy with respect to pump energy. (b) Transverse gain under different time delay in traditional one-pulse pump scheme.

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Fig. 5. Schematic of beam combination of two time-separated pump laser pulses with the same polarization state.

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Zebiao Gan, Xiaoyan Liang, Lianghong Yu, Jiaqi Hong, Ming Xu, Ying Hang, Ruxin Li. Comparison of high-energy multi-pass Ti:sapphire amplifiers with a different Ti-dopant concentration[J]. Chinese Optics Letters, 2017, 15(9): 091401.

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