[1] 仲莉, 王俊, 冯小明, 等. 808 nm大功率无铝有源区非对称波导结构激光器[J]. 中国激光, 2007, 34(8): 1037-1042.

    Zhong Li, Wang Jun, Feng Xiaoming, et al.. 808 nm high-power lasers with Al-free active region with asymmetric waveguide structure[J]. Chinese J Lasers, 2007, 34(8): 1037-1042.

[2] 李建军, 崔碧峰, 邓军, 等. 非对称超大光腔980 nm大功率半导体激光器[J]. 中国激光, 2013 40(11): 1102011.

    Li Jianjun, Cui Bifeng, Deng Jun, et al.. 980 nm high power semiconductor laser with asymmetric super large optical cavity[J]. Chinese J Lasers, 2013, 40 (11): 1102011.

[3] 李特, 郝二娟, 李再金, 等. 高功率1060 nm半导体激光器波导结构优化[J]. 红外与毫米波学报, 2012, 31(3): 226-230.

    Li Te, Hao Erjuan, Li Zaijing, et al.. Optimization of waveguide structure for high power 1060 nm diode laser[J]. J Infrared and Milimeter Wave, 2012, 31(3): 226-230.

[4] Elliott S N, Smowton P M, Berry G. Optimisation of high power AlGaInP laser diodes for optical storage applications[J]. IEE Proceedings-Optoelectronics, 2006, 153(6): 321-325.

[5] Smowton P M, Lewis G M, Yin M, et al.. 650-nm lasers with narrow far-field divergence with integrated optical mode expansion layers[J]. IEEE J Selected Topics in Quantum Electronics, 1999, 5(3): 735-739.

[6] Chen Y C, Waters R G, Dalby R J. Single quantum well laser with vertically integrated passive waveguides[J]. Appl Phys Lett, 1990, 56(15): 1409-1411.

[7] Yen S T, Lee C P. Theoretical investigation on semiconductor lasers with passive waveguides[J]. IEEE J Quantum Electronics, 1996, 32(1): 4-13.

[8] 王晓燕, 赵润, 沈牧. 小发散角高功率半导体激光器研究[J]. 红外与激光工程, 2006, 35(3): 302-304.

    Wang Xiaoyan, Zhao Run, Sheng Mu. High-power semiconductor lasers with small divergence[J]. Infrared and Laser Engineering, 2006, 35(3): 302-304.

[9] 安振峰, 刘浩, 陈宏泰, 等. 单模小发散角免键合激光器芯片的研制[J]. 微纳电子技术, 2011, 48(6): 353-356.

    An Zhengfeng, Liu Hao, Cheng Hongtai, et al.. Development of the single mode laser chip with small divergence and no bonding[J]. Micro-Nanoelectronic Technology, 2011, 48(6): 353-356.

[10] 杨国文, 徐俊英, 张敬明, 等. 窄发散角量子阱激光器的结构设计与分析[J]. 半导体学报, 1996, 17(7): 500-505.

    Yang Guowen, Xu Junying, Zhang Jinming, et al.. Structure design and analysis of quantum well lasers with low beam divergence[J]. Chinese J Semiconductors, 1996, 17(7): 500-505.

[11] 江剑平. 半导体激光器[M]. 北京: 电子工业出版社, 1998. 88-89.

    Jiang Jianping. Semiconductor Lasers[M]. Beijing: Electronic Industry Press, 1998. 88-89.

[12] 李雅静, 安振峰, 陈国鹰, 等. 小发散角量子阱激光器研究[J]. 纳米器件与技术, 2008, 45(11): 635-638.

    Li Yajing, An Zhengfeng, Cheng Guoying, et al.. Study of quantum-well laser with smallf far-field divergence angle[J]. Nano Device and Technology, 2008, 45(11): 635-638.

[13] 马春生, 刘式墉. 光波导模式理论[M]. 长春: 吉林大学出版社, 2006. 103-108.

    Ma Chunsheng, Liu Shiyong. Optical Waveguide Mode Theory[M]. Changchun: Jilin University Press, 2006. 103-108.

[14] 郑晓刚, 李特, 芦鹏, 等. 980 nm半导体激光器腔面温度特性分析[J]. 中国激光, 2013, 40(11): 1102004.

    Zheng Xiaogang, Li Te, Lu Peng, et al.. Analysis of temperature characteristics of 980 nm semiconductor laser facet[J]. Chinese J Lasers, 2013, 40(11): 1102004.

[15] 梁雪梅, 秦莉, 王烨, 等. 808 nm边发射二极管激光器特征温度[J]. 光学学报, 2010, 30(5): 1391-1395.

    Liang Xuemei, Qin Li, Wang Ye, et al.. 808 nm edge-emitting diode lasers characteristic temperatures[J]. Acta Optica Sinica, 2010, 30(5): 1391-1395.

[16] 黄海华, 刘云, 杨晔, 等. 850 nm锥形半导体激光器的温度特性[J]. 中国光学, 2013, 6(2): 201-207.

    Huang Haihua, Liu Yun, Yang Ye, et al.. Temperature characteristics of 850 nm tapered semiconductor lasers[J]. Chinese Optics, 2013, 6(2): 201-207.