脉冲激光沉积法制备Bi2Sr2Co2Oδ热电薄膜及其激光感生的热电电压效应

邹平; 李智东; 张辉; 赵昆渝; 张鹏翔

中国激光, 2009, 36 (8): 2154, 网络出版: 2009-08-13

脉冲激光沉积法制备Bi₂Sr₂Co₂Oδ热电薄膜及其激光感生的热电电压效应

Bi₂Sr₂Co₂Oδ Thermoelectric Thin Films Prepared by Pulsed Laser Deposition and Study on Laser Induced Thermoelectric Voltages Effect

论文大纲

邹平 ^1,*李智东 ¹张辉 ^1,2赵昆渝 ¹张鹏翔 ^1,2

作者单位

¹ 昆明理工大学材料与冶金工程学院, 云南昆明 650093

² 昆明理工大学光电子新材料研究所, 云南昆明 650051

摘要

采用脉冲激光沉积(PLD)法在倾斜Al2O3(0001)衬底上制备了Bi2Sr2Co2Oδ(BSCO)系列热电薄膜, 发现该类薄膜中有激光感生热电电压(LITV)效应。X射线衍射(XRD)谱显示Bi2Sr2Co2Oδ热电薄膜沿c轴外延生长。采用标准四探针法测试了Bi2Sr2Co2Oδ热电薄膜的电阻随温度的关系。结果表明所制备的Bi2Sr2Co2Oδ热电薄膜在80～360 K范围内呈半导体导电特性。研究发现, 在倾斜角度分别为10°和15°的倾斜衬底上制备的Bi2Sr2Co2Oδ热电薄膜都存在一个最佳厚度, 在这一厚度下可使激光感生热电电压(LITV)信号的峰值电压达到最大, 分别为 0.4442 V和0.7768 V。可以认为该激光感生热电电压信号是由Bi2Sr2Co2Oδ薄膜面内和面间塞贝克系数张量的各向异性引起的。

Abstract

Bi2Sr2Co2Oδ (BSCO) thin films were grown on Al2O3 (0001) substrates by pulsed laser deposition (PLD) technique. Laser induced thermoelectric voltage (LITV) effect was observed in those films on vicinal-cut substrate. The result of X-ray diffraction (XRD) showed that films on untilted Al2O3 (0001) substrates were c oriented. The temperature dependence of the electrical resistivity of films was measured by a standard four probes method, the result showed that films were semiconductor from 80 K to 360 K. The optimal film thickness was found in two tilted substrates with 10° and 15° angles, at which the peak voltage of LITV signals reach 0.4442 V and 0.7768 V respectively. The anisotropy of Seebeck coefficient lead to laser induced thermoelectric voltage signals.

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邹平, 李智东, 张辉, 赵昆渝, 张鹏翔. 脉冲激光沉积法制备Bi₂Sr₂Co₂Oδ热电薄膜及其激光感生的热电电压效应[J]. 中国激光, 2009, 36(8): 2154. Zou Ping, Li Zhidong, Zhang Hui, Zhao Kunyu, Zhang Pengxiang. Bi₂Sr₂Co₂Oδ Thermoelectric Thin Films Prepared by Pulsed Laser Deposition and Study on Laser Induced Thermoelectric Voltages Effect[J]. Chinese Journal of Lasers, 2009, 36(8): 2154.

脉冲激光沉积法制备Bi₂Sr₂Co₂Oδ热电薄膜及其激光感生的热电电压效应

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