A reconfigurable terahertz polarization converter based on metal–graphene hybrid metasurface

Junxiang Huang; Tao Fu; Haiou Li; Zhaoyu Shou; Xi Gao

doi:doi:10.3788/COL202018.013102

Chinese Optics Letters, 2020, 18 (1): 013102, Published Online: Dec. 30, 2019

A reconfigurable terahertz polarization converter based on metal–graphene hybrid metasurface Download： 986次

Junxiang Huang ¹Tao Fu ¹Haiou Li ¹Zhaoyu Shou ¹Xi Gao ^1,2,*

Author Affiliations

¹ School of Information and Communication, Guilin University of Electronic Technology, Guilin 541004, China

² Key Laboratory of THz Technology, Ministry of Education, Chengdu 610054, China

Figures & Tables

Fig. 1. (a) Schematic diagram of the proposed device. (b) Unit cell of the polarizer.

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Fig. 2. Simulated $R_{u u}$ , $R_{v u}$ , and AR for $E_{F} = 0 eV$ and $N = 3$ . (a) The amplitude ( $| R_{u u} |$ and $| R_{v u} |$ ) and phase difference ( $Δ φ$ ) of the reflection coefficient. (b) The AR of the reflected wave.

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Fig. 3. In case of $E_{F} = 0.5 eV$ and $N = 3$ , the amplitude of the reflection coefficient ( $| R_{u u} |$ and $| R_{v u} |$ ) and the PCR for linear polarization conversion.

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Fig. 4. AR of the reflection wave plotted as a function of $E_{F}$ .

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Fig. 5. In case of $E_{F} = 0 eV$ , the simulated $R_{u u}$ , $R_{v u}$ , and ellipticity for $N = 1, 2, and 3$ . (a) The amplitudes and the phase difference of $R_{u u}$ and $R_{v u}$ . (b) The ellipticity.

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Fig. 6. Device performance varied with $N$ . (a) The $| R_{u u} |$ and $| R_{v u} |$ . (b) The PCR. (c) The relationship between $V_{g}$ and $E_{F}$ .

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Fig. 7. (a), (b) The equivalent circuits of the metasurface for $x$ - and $y$ -polarized incident waves. (c), (d) The equivalent circuit models along the $x$ and $y$ directions.

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Fig. 8. (a) Resistance and (b) inductance for different $E_{F}$ and $N$ .

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Fig. 9. Simulated $S_{11}$ for the equivalent circuit models and the reflective coefficients ( $R_{x x}$ and $R_{y y}$ ) simulated by CST for different $E_{F}$ . (a) $E_{F} = 0 eV$ and (b) $E_{F} = 0.5 eV$ .

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Table1. Optimized Values of the Circuit Elements for N=3

	$L_{x}$ (pH)	$C_{x}$ (fF)	$R_{x} (Ω)$	$C_{y}$ (fF)	$L_{y}$ (pH)	$R_{y}$ (Ω)
Parameter ( $E_{F} = 0 eV$ )
Initial	6	0.7	0	0.09	0.1	0
Optimal	8	0.22	2.56	0.067	8.5	6
Parameter ( $E_{F} = 0.5 V$ )
Initial	6	0.7	0	0.09	0.1	0
Optimal	9	0.65	1	0.067	8.5	6

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Junxiang Huang, Tao Fu, Haiou Li, Zhaoyu Shou, Xi Gao. A reconfigurable terahertz polarization converter based on metal–graphene hybrid metasurface[J]. Chinese Optics Letters, 2020, 18(1): 013102.

A reconfigurable terahertz polarization converter based on metal–graphene hybrid metasurface Download： 986次

Fig. 1. (a) Schematic diagram of the proposed device. (b) Unit cell of the polarizer.

Fig. 2. Simulated $R_{u u}$ , $R_{v u}$ , and AR for $E_{F} = 0 eV$ and $N = 3$ . (a) The amplitude ( $| R_{u u} |$ and $| R_{v u} |$ ) and phase difference ( $Δ φ$ ) of the reflection coefficient. (b) The AR of the reflected wave.

Fig. 3. In case of $E_{F} = 0.5 eV$ and $N = 3$ , the amplitude of the reflection coefficient ( $| R_{u u} |$ and $| R_{v u} |$ ) and the PCR for linear polarization conversion.

Fig. 4. AR of the reflection wave plotted as a function of $E_{F}$ .

Fig. 5. In case of $E_{F} = 0 eV$ , the simulated $R_{u u}$ , $R_{v u}$ , and ellipticity for $N = 1, 2, and 3$ . (a) The amplitudes and the phase difference of $R_{u u}$ and $R_{v u}$ . (b) The ellipticity.

Fig. 6. Device performance varied with $N$ . (a) The $| R_{u u} |$ and $| R_{v u} |$ . (b) The PCR. (c) The relationship between $V_{g}$ and $E_{F}$ .

Fig. 7. (a), (b) The equivalent circuits of the metasurface for $x$ - and $y$ -polarized incident waves. (c), (d) The equivalent circuit models along the $x$ and $y$ directions.

Fig. 8. (a) Resistance and (b) inductance for different $E_{F}$ and $N$ .

Fig. 9. Simulated $S_{11}$ for the equivalent circuit models and the reflective coefficients ( $R_{x x}$ and $R_{y y}$ ) simulated by CST for different $E_{F}$ . (a) $E_{F} = 0 eV$ and (b) $E_{F} = 0.5 eV$ .

Table1. Optimized Values of the Circuit Elements for N=3

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A reconfigurable terahertz polarization converter based on metal–graphene hybrid metasurface Download： 986次

Fig. 1. (a) Schematic diagram of the proposed device. (b) Unit cell of the polarizer.

Fig. 2. Simulated Ruu, Rvu, and AR for EF=0 eV and N=3. (a) The amplitude (|Ruu| and |Rvu|) and phase difference (Δφ) of the reflection coefficient. (b) The AR of the reflected wave.

Fig. 3. In case of EF=0.5 eV and N=3, the amplitude of the reflection coefficient (|Ruu| and |Rvu|) and the PCR for linear polarization conversion.

Fig. 4. AR of the reflection wave plotted as a function of EF.

Fig. 5. In case of EF=0 eV, the simulated Ruu, Rvu, and ellipticity for N=1,2,and3. (a) The amplitudes and the phase difference of Ruu and Rvu. (b) The ellipticity.

Fig. 6. Device performance varied with N. (a) The |Ruu| and |Rvu|. (b) The PCR. (c) The relationship between Vg and EF.

Fig. 7. (a), (b) The equivalent circuits of the metasurface for x- and y-polarized incident waves. (c), (d) The equivalent circuit models along the x and y directions.

Fig. 8. (a) Resistance and (b) inductance for different EF and N.

Fig. 9. Simulated S11 for the equivalent circuit models and the reflective coefficients (Rxx and Ryy) simulated by CST for different EF. (a) EF=0 eV and (b) EF=0.5 eV.

Table1. Optimized Values of the Circuit Elements for N=3

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Fig. 2. Simulated $R_{u u}$ , $R_{v u}$ , and AR for $E_{F} = 0 eV$ and $N = 3$ . (a) The amplitude ( $| R_{u u} |$ and $| R_{v u} |$ ) and phase difference ( $Δ φ$ ) of the reflection coefficient. (b) The AR of the reflected wave.

Fig. 3. In case of $E_{F} = 0.5 eV$ and $N = 3$ , the amplitude of the reflection coefficient ( $| R_{u u} |$ and $| R_{v u} |$ ) and the PCR for linear polarization conversion.

Fig. 4. AR of the reflection wave plotted as a function of $E_{F}$ .

Fig. 5. In case of $E_{F} = 0 eV$ , the simulated $R_{u u}$ , $R_{v u}$ , and ellipticity for $N = 1, 2, and 3$ . (a) The amplitudes and the phase difference of $R_{u u}$ and $R_{v u}$ . (b) The ellipticity.

Fig. 6. Device performance varied with $N$ . (a) The $| R_{u u} |$ and $| R_{v u} |$ . (b) The PCR. (c) The relationship between $V_{g}$ and $E_{F}$ .

Fig. 7. (a), (b) The equivalent circuits of the metasurface for $x$ - and $y$ -polarized incident waves. (c), (d) The equivalent circuit models along the $x$ and $y$ directions.

Fig. 8. (a) Resistance and (b) inductance for different $E_{F}$ and $N$ .

Fig. 9. Simulated $S_{11}$ for the equivalent circuit models and the reflective coefficients ( $R_{x x}$ and $R_{y y}$ ) simulated by CST for different $E_{F}$ . (a) $E_{F} = 0 eV$ and (b) $E_{F} = 0.5 eV$ .