在c-面蓝宝石上控制生长高质量的ZnO单晶薄膜

利用MgO和低温ZnO的缓冲层技术，在c面蓝宝石衬底上用等离子体辅助分子束外延（P-MBE）的方法生长了高质量的ZnO单晶薄膜。通过XRD测试，ZnO薄膜样品具有c轴方向的择优取向，其（002）方向摇摆曲线的半高宽（FWHM）仅为68.4 arcsec，（102）方向摇摆曲线的半高宽（FWHM）为1 150 arcsec，显示了外延薄膜极高的晶体质量。另外从扫描电子显微测试结果和原子力显微测试结果来看，ZnO薄膜具有极为平整的表面，3 μm×3 μm面积内的均方根粗糙度仅为0.842 nm，接近原子级的平整。拉曼光谱（Raman）和荧光光谱（PL）测试结果显示，ZnO薄膜样品内部的应力基本释放，而且具有极低的点缺陷密度。高质量ZnO单晶薄膜的实现为ZnO基的光电器件的制备提供了坚实的基础。

Abstract

High quality ZnO thin film was obtained on c-sapphire substrate by using a technique of plasma assisted molecular beam epitaxy (P-MBE),in which MgO and low temperature ZnO are used as buffer layers. High-resolution XRD measurement shows the full width at half maximum (FWHM) of (002) and (102) are only 68.4 and 1 150 arcsec,respectively. In the meantime,atomically smooth surface with root mean square (RMS) surface roughness of 0.842 nm is realized. In addition,Raman and photoluminescence (PL) measurements show that ZnO layer has extremely low stress level and defect density. The realization of high quality ZnO thin film pays a good way for the application of ZnO-based optoelectronic devices.

参考文献

[1] Tang Z K,Wong G K L,Yu P,et al. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films ［J］. Appl. Phys. Lett.,1998,72(22):3270-3272.

[2] Zu P,Tang Z K,Wong G K L,et al. Ultraviolet spontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperature ［J］. Solid State Commun.,1997,103:459-463.

[3] Bagnall D,Chen Y F,Shen M Y,et al. Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBE ［J］. J. Cryst. Growth,1998,184:605-609.

[4] Tsukazaki A,Ohtomo A,Onuma T,et al. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO ［J］. Nat. Mater.,2005,4:42-46.

[5] Shen D Z,Mei Z X,Liang H L,et al. ZnO-based matierial,heterojunction and photoelctronic device ［J］. Chin. J. Lumin.(发光学报),2014,35(1):1-60 (in Chinese)

[6] Fan X M,Lian J S,Guo Z X,et al. Microstructure and photoluminescence properties of ZnO thin films grown by PLD on Si(111) substrates ［J］. Appl. Surf. Sci.,2005,239:176-181.

[7] Han J,Zhang P,Gong H B,et al. Influence of the growth conditions on the transparent conductive properties of ZnO∶Al thin films grown by pulsed laser deposition ［J］. Acta Phys. Sinica (物理学报),2013,62(21):216102-1-5 (in Chinese).

[8] Carcia P F,McLean R S,Reilly M H,et al. Transparent ZnO thin-film transistor fabricated by RF magnetron sputtering ［J］. Appl. Phys. Lett.,2003,82(8):1117-1119.

[9] Liu M,Liu Z W,Gu J F,et al. Effect of sapphire substrate pre-treatment on the growth of ZnO films ［J］. Acta Phys. Sinica (物理学报),2008,57(1):1133-1137 (in Chinese).

[10] Gao L L,Liu J S,Zhang M,et al. Preparation and characterization N doped p-type MgZnO film ［J］. Chin. J. Liq. Cryst. Disp.(液晶与显示),2014,29(4):499-503 (in Chinese).

[11] Zhou J,He X L,Jin H,et al. Flexible ZnO thin film SAW device on polyimide substrate ［J］. Opt. Precision Eng.(光学精密工程),2014,22(2):346-353 (in Chinese)

[12] Ohnishi S,Hirokawa Y,Shiosaki T,et al. Chemical vapor deposition of single-crystalline ZnO film with smooth surface on intermediately sputtered ZnO thin film on sapphire ［J］. Jpn. J. Appl. Phys.,1978,17:773-778.

[13] Chen X L,Xue J M,Zhang J Q,et al. Effect of substrate temperature on the ZnO thin films as TCO in solar cells grown by MOCVD technique ［J］. Acta Phys. Sinica (物理学报),2007,56(1):1563-1567 (in Chinese)

[14] Ohnishi S,Hirokawa Y,Shiosaki T,et al. Growth of ZnO thin film by laser MBE: Lasing of exciton at room temperature ［J］. Phys. Stat. Sol.(b),1997,202:669-674.

[15] Zhao P C,Zhang Z Z,Yao B,et al. Electrical properties of ZnO thin films growth under different conditions ［J］. Chin. J. Lumin.(发光学报),2013,34(11):1430-1434 (in Chinese)

[16] Su S C,Lv Y M,Mei T. Fabrication and optical properties of ZnO/ZnMgO multiple quantum wells on m-sapphire substrates ［J］. Acta Phys. Sinica (物理学报),2011,60(9):096801-1-4 (in Chinese).

[17] Ohtomo A,Tamura K,Saikusa K,et al. Single crystalline ZnO films grown on lattice-matched ScAlMgO4(0001)substrates ［J］. Appl. Phys. Lett.,1999,75(18):2635-2637.

[18] Nakahara K,Akasaka S,Yuji H,et al. Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates ［J］. Appl. Phys. Lett.,2010,97(1):013501-1-3.

[19] Fons P,Iwata K,Yamada A,et al. Uniaxial locked epitaxy of ZnO on the a face of sapphire ［J］. Appl. Phys. Lett.,2000,77(12):1801-1803.

[20] Chen Y F,Bagnall D,Koh H,et al. Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization ［J］. J. Appl. Phys.,1998,84:3912-3917.

[21] zgür ,Alivov Y I,Liu C,et al. A comprehensive review of ZnO materials and devices ［J］. J. Appl. Phys.,2005,98(4):041301-1-6.

[22] Lester S,Ponce F,Craford M,et al. High dislocation densities in high efficiency GaN-based light-emitting diodes ［J］. Appl. Phys. Lett.,1995,66(8):1249-1251.

[23] Nakamura S. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes ［J］. Science,1998,281:956-1001.

[24] Decremps F,Pellicer-Porres J,Saitta A M,et al. High-pressure Raman spectroscopy study of wurtzite ZnO ［J］. Phys. Rev. B,2002,65(9):092101-1-7.

[25] Vanheusden K,Warren W,Seager C,et al. Mechanisms behind green photoluminescence in ZnO phosphor powders ［J］. J. Appl. Phys. B,1996,79:7983-7987.

[26] Vanheusden K,Seager C,Warren W,et al. Correlation between photoluminescence and oxygen vacancies in ZnO phosphors ［J］. Appl. Phys. Lett.,1996,68(3):403-405

[27] Shan F K,Liu G X,Lee W L,et al. The role of oxygen vacancies in epitaxial-deposited ZnO thin films［J］. J. Appl. Phys.,2007,101(5):053106-1-6.

张权林, 苏龙兴, 吴天准, 王玉超, 祝渊, 陈明明, 桂许春, 汤子康. 在c-面蓝宝石上控制生长高质量的ZnO单晶薄膜[J]. 发光学报, 2015, 36(10): 1171. ZHANG Quan-lin, SU Long-xing, WU Tian-zhun, WANG Yu-chao, ZHU Yuan, CHEN Ming-ming, GUI Xu-chun, TANG Zi-kang. Controllable Growth of High Quality ZnO Thin Film on c-sapphire[J]. Chinese Journal of Luminescence, 2015, 36(10): 1171.

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