Chinese Optics Letters, 2021, 19 (7): 071402, Published Online: Apr. 2, 2021   

High-repetition-rate 1.5 µm passively Q-switched Er:Yb:YAl3(BO3)4 microchip laser Download: 933次

Author Affiliations
1 Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
2 Fuzhou University, Fuzhou 350002, China
3 Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
4 Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
5 Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Device, Fuzhou 350108, China
Abstract
End-pumped by a 976 nm diode laser, a high-repetition-rate Er:Yb:YAl3(BO3)4 microchip laser passively Q-switched by a Co2+:MgAl2O4 crystal is reported. At a quasi-continuous-wave pump power of 20 W, a 1553 nm passively Q-switched laser with the repetition rate of 544 kHz, pulse duration of 8.3 ns, and pulse energy of 3.9 μJ was obtained. To the best of our knowledge, the 544 kHz is the highest reported value for the 1.5 μm passively Q-switched pulse laser. In the continuous-wave pumping experiment, the maximum repetition rate of 144 kHz with the pulse duration of 8.0 ns and pulse energy of 1.7 μJ was obtained at the incident pump power of 6.3 W.

Songqing Zha, Yujin Chen, Bingxuan Li, Yanfu Lin, Wenbin Liao, Yuqi Zou, Chenghui Huang, Zhanglang Lin, Ge Zhang. High-repetition-rate 1.5 µm passively Q-switched Er:Yb:YAl3(BO3)4 microchip laser[J]. Chinese Optics Letters, 2021, 19(7): 071402.

本文已被 3 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!