Songqing Zha 1,2Yujin Chen 1,*Bingxuan Li 1,3Yanfu Lin 1[ ... ]Ge Zhang 1,3,5,**
Author Affiliations
Abstract
1 Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
2 Fuzhou University, Fuzhou 350002, China
3 Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
4 Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
5 Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Device, Fuzhou 350108, China
End-pumped by a 976 nm diode laser, a high-repetition-rate Er:Yb:YAl3(BO3)4 microchip laser passively Q-switched by a Co2+:MgAl2O4 crystal is reported. At a quasi-continuous-wave pump power of 20 W, a 1553 nm passively Q-switched laser with the repetition rate of 544 kHz, pulse duration of 8.3 ns, and pulse energy of 3.9 μJ was obtained. To the best of our knowledge, the 544 kHz is the highest reported value for the 1.5 μm passively Q-switched pulse laser. In the continuous-wave pumping experiment, the maximum repetition rate of 144 kHz with the pulse duration of 8.0 ns and pulse energy of 1.7 μJ was obtained at the incident pump power of 6.3 W.
1.5?μm microchip laser passive Q-switching Er:Yb:YAl34 crystal high-repetition-rate laser pulse 
Chinese Optics Letters
2021, 19(7): 071402

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