发光学报, 2016, 37 (10): 1230, 网络出版: 2017-01-13   

不同封装材料的中功率GaN基LED器件老化分析

Degradation Analysis of Mid-power GaN-based LEDs with Different Package Materials
作者单位
中国科学院半导体研究所 半导体照明研发中心, 北京 100083
引用该论文

符佳佳, 曹海城, 赵丽霞, 王军喜, 李晋闽. 不同封装材料的中功率GaN基LED器件老化分析[J]. 发光学报, 2016, 37(10): 1230.

FU Jia-iia, CAO Hai-cheng, ZHAO Li-xia, WANG Jun-xi, LI Jin-min. Degradation Analysis of Mid-power GaN-based LEDs with Different Package Materials[J]. Chinese Journal of Luminescence, 2016, 37(10): 1230.

参考文献

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符佳佳, 曹海城, 赵丽霞, 王军喜, 李晋闽. 不同封装材料的中功率GaN基LED器件老化分析[J]. 发光学报, 2016, 37(10): 1230. FU Jia-iia, CAO Hai-cheng, ZHAO Li-xia, WANG Jun-xi, LI Jin-min. Degradation Analysis of Mid-power GaN-based LEDs with Different Package Materials[J]. Chinese Journal of Luminescence, 2016, 37(10): 1230.

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