Ⅲ族氮化物光电阴极原位程序升温脱附
成伟, 石峰, 杨书宁, 周玉鉴, 任彬. Ⅲ族氮化物光电阴极原位程序升温脱附[J]. 红外与激光工程, 2019, 48(10): 1017002.
Cheng Wei, Shi Feng, Yang Shuning, Zhou Yujian, Ren Bin. In situ temperature programmed desorption of Ⅲ-nitride photocathode[J]. Infrared and Laser Engineering, 2019, 48(10): 1017002.
[2] Wang Shurong, Qu Yi, Li Futian. Study of atmospheric background and target chareacteristic in ultraviolet band[J]. Infrared and Laser Engineering, 2007, 36(s2): 433-435. (in Chinese)
[3] Dyer J S, Benson R C, Phillips T E, et al. Outgassing analyses performed during vacuum bakeout of components painted with Chemglaze Z306/9922[C]//SPIE, 1992: 177-194.
[7] Ho Y M, Parks H G, Vermeire B. A model for outgassing of organic contamination from wafer carrier boxes[C]// Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop. IEEE, 2002: 314-318.
[8] Wang Li, Sun Lichen, Yan Rongxin, et al. Outgassing analysis of testing products in unltra-high vacuum[J] Spacecraft Environment Engineering, 2010, 27(6): 735-738.
成伟, 石峰, 杨书宁, 周玉鉴, 任彬. Ⅲ族氮化物光电阴极原位程序升温脱附[J]. 红外与激光工程, 2019, 48(10): 1017002. Cheng Wei, Shi Feng, Yang Shuning, Zhou Yujian, Ren Bin. In situ temperature programmed desorption of Ⅲ-nitride photocathode[J]. Infrared and Laser Engineering, 2019, 48(10): 1017002.