Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides

LI Kai-li; ZHANG Jia-shun; AN Jun-ming; LI Jian-guang; WANG Liang-liang; WANG Yue; WU Yuan-da; YIN Xiao-jie; HU Xiong-wei

doi:doi:10.1007/s11801-017-7076-8

光电子快报（英文版）, 2017, 13 (4): 241, Published Online: Sep. 13, 2018

Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides

LI Kai-li ^1,2ZHANG Jia-shun ^1,*AN Jun-ming ^1,2LI Jian-guang ¹WANG Liang-liang ¹WANG Yue ¹WU Yuan-da ^1,2YIN Xiao-jie ¹HU Xiong-wei ¹

Author Affiliations

¹ State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

² College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China

Figures & Tables

LI Kai-li, ZHANG Jia-shun, AN Jun-ming, LI Jian-guang, WANG Liang-liang, WANG Yue, WU Yuan-da, YIN Xiao-jie, HU Xiong-wei. Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides[J]. 光电子快报（英文版）, 2017, 13(4): 241.