1.3-μm uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes

Dingli Wang; Ning Zhou; Jun Zhang; Yu Liu; Ninghua Zhu; Linsong Li

Chinese Optics Letters, 2005, 3 (8): 08466, Published Online: Jun. 6, 2006

1.3-μm uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes Download： 1020次

论文大纲

Dingli Wang ^1,*Ning Zhou ¹Jun Zhang ¹Yu Liu ²Ninghua Zhu ²Linsong Li ¹

Author Affiliations

¹ Wuhan Accelink Technologies Co., Ltd, Wuhan Research Institute of Post and Telecommunication, Wuhan 430074

² Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

140.5960 semiconductor lasers 230.5590 quantum-well devices 250.0250 optoelectronics

Abstract

In this paper, we report a novel 1.3-μm uncooled AlGaInAs/InP multiple quantum well (MQW) ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of reversed-mesa ridge waveguide (RM-RWG) structure, polyimide planarization, and lift-off processes technology, an uncooled 1.3-μm, 10-Gb/s directly modulated MQW ridge waveguide laser diode was successfully fabricated. The threshold current and the slope efficiency were 7 mA and 0.48 mW/mA, respectively. The directly modulated bandwidths of 11 and 9.2 GHz were achieved at room temperature and 80 Celsius degrees, respectively.

References

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Dingli Wang, Ning Zhou, Jun Zhang, Yu Liu, Ninghua Zhu, Linsong Li. 1.3-μm uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes[J]. Chinese Optics Letters, 2005, 3(8): 08466.

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