激光与光电子学进展, 2015, 52 (1): 012302, 网络出版: 2014-12-29  

大功率LED 器件热阻的热敏感性研究

Research in the Heat Sensitivity of Thermal Resistance of High Power LED Devices
作者单位
1 上海半导体照明工程技术研究中心, 上海201203
2 上海大学新型显示技术及应用集成教育部重点实验室, 上海200072
3 上海大学机械工程与自动化学院, 上海200072
摘要
随着发光二极管(LED)功率的提高,散热的挑战性也越来越高,而热量的集聚会引起LED 结温的上升。过高的结温不但会影响LED 的光功率和光通量等性能参数,还会使器件寿命急剧衰减。因此掌握LED 器件的温升规律成为提高器件可靠性的关键。实验中选取了不同封装结构的LED 器件,对不同驱动电流、不同基板温度和不同封装材料的LED 器件分别进行了热阻、光功率等性能测试。实验发现,随着电流的增加或者基板温度的升高,LED 器件的热阻呈现先下降后上升的趋势,不同封装基板的器件变化幅度有所不同;升高基板温度时,铝基板封装的LED 器件由于结温高光功率衰减快热阻呈现下降趋势。结果表明互连材料层、基板的导热能力是影响LED 器件热阻差异的关键。
Abstract
As the electric power of high-power light emitting diode (HP-LED) increasing, the challenge of heat dissipation is also becoming higher and higher. The heat which can′ t be dissipated from chip effectively will raise the junction temperature of the LED devices. High junction temperature will not only affect the optical power, flux and other performance of LED devices, but also decay the lifetime of device rapidly. Therefore,knowing the temperature rising rules of HP- LED devices well becomes the key to improve the reliability of devices. The effects of different drive current, different substrate temperatures and different packaging materials on thermal resistance of LED devices are studied. The results show with the increase of current or with the substrate temperature increases, the thermal resistance of LED devices trend to decline and then rise. The changes of thermal resistance of LED devices packaged by aluminum substrates and ceramic substrates are different. When the substrate temperature increases, the thermal resistance of LED devices interconnected by the Al substrate keeps declining because of the higher pn- junction temperature of the LED device. The tested results of the thermal resistance of LED devices interconnected by different materials show that the thermal resistance are obviously effected by the interconnect layer and the substrate.
参考文献

[1] Paasschens Jcj, Harmsma S, Van der Toom R. Dependence of thermal resistance on substrate and actual temperature[C]. Proceedings of the 2004 Bipolar/BiCMOS Circuits and Technology Meeting, Montreal, Canada. 2004. 96-99.

[2] 毛德丰, 郭伟琳, 高国, 等. 功率LED 结温和热阻在不同电流下的性质研究[J]. 固体电子学研究与进展, 2010, 30(2): 308-312.

    Mao Defeng, Guo Weilin, Gao Guo, et al.. Research on the thermal resistance and junction temperature of high-power LEDs[J]. Research& Progress of Solid State Electronics, 2010, 30(2): 308-312.

[3] Liew Weiching, Ong Chaoyui, Devarajan Mutharasu. Thermal analysis of high power LEDs at different drive-in current[C]. 2nd Asia Symposium on Quality Electronic Design, Penang, Malaysica, 2010. 70-75.

[4] Lee Szeyen, Mutharasu Devarajan. Thermal analysis of multi- chip LED package with different position and substrate temperatures[C]. 2011 IEEE 2nd International Conference on Photonics, Kota Kinabalu, Malaysia, 2011. 1-4.

[5] 余彬海, 王垚浩. 结温与热阻制约大功率LED 发展[J]. 发光学报, 2005, 26(6): 761-766.

    Yu Binhai, Wang Yaohao. Junction temperature and thermal resistance affect the development of HP-LED[J]. Chinese Journal of Luminescence, 2005, 26(6): 761-766.

[6] Chen Liucaroline, Lehtiniemi Reijo, Vandevelde Bart, et al.. Steady state and transient thermal characterization for flip chip interconnection on flexible substrate[C]. 7th Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, Como, Italia, 2006. 1-6.

[7] 庄鹏. 大功率LED 的热阻测量与结构分析[J]. 现代显示, 2008, (9): 25-29.

    Zhuang Peng. Thermal resistance measurement and structure identification for high-power LED[J]. Advanced Display,2008, (9): 25-29.

[8] Kotchetkov D, Zou J, Balandin Aa, et al.. Effect of dislocations on thermal conductivity of CaN layers[J]. Applied Phys-ics Letters, 2001, 79(26): 4316-4318.

[9] Christensen Adam, Nicol David, Ferguson Lan, et al.. Thermal design considerations in the packaging of GaN based light emitting diodes[C]. Fifth International Conference on Solid State Lighting, Denver, Colorado, 2005. 1-14.

[10] Singal Bemards. Factors affecting semiconductor device thermal resistance measurements[C]. Fourth Annual Semicon-ductor Thermal and Temperature Measurement Symposium, San Diego, 1988. 12-18.

杨卫桥, 张建华, 殷录桥. 大功率LED 器件热阻的热敏感性研究[J]. 激光与光电子学进展, 2015, 52(1): 012302. Yang Weiqiao, Zhang Jianhua, Yin Luqiao. Research in the Heat Sensitivity of Thermal Resistance of High Power LED Devices[J]. Laser & Optoelectronics Progress, 2015, 52(1): 012302.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!