1维亚微米弹道二极管在不同外加电压脉冲下的数值模拟
[1] Orvis W J,Khanaka G H,Yee J H.A review of the physics and response models for burnout of semiconductor devices[R].UCRL-53573,1984.
[2] Grasser T,Tang T,Kosina H,et al.A review of hydrodynamic and energy-transport models for semiconductor device simulation[J].Proceedings of the IEEE,2003,91(2):251-274.
[3] Apanovich Y,Lyumkis E,Polsky B,et al.Steady-state and transient analysis of submicron devices using energy balance and simplified hydrodynamic models[J].IEEE Trans Computer-Aided Design,1994,13(6):702-711.
[4] MINIMOS NT device and circuit simulator[P].(release 2.0) Institute for Microelectronics,Tu Vienna,2002:83.
[5] Siegfried S,Wilfried H,Marden S,et al.The evolution of the MINIMOS mobility model[J].Solid-State Electronics,1990,33(11):1425-1436.
[6] 张义门,任建民.半导体器件计算机模拟[M].北京:电子工业出版社,1991.(Zhang Y M,Ren J M.Computer simulation of semiconductor devices.Beijing:Publishing House of Electronic Industry,1991.
[7] Quade W,Scholl E,Rudan M.Hydrodynamic simulation of impact-ionization effects in p-n junctions[J].IEEE Trans Computer-aided Design,1991,10(10):1287-1294.
[8] Gardner C L.Numerical simulation of a steady-state electron shock wave in a submicrometer semiconductor device[J].IEEE Trans Electron Devices,1991,38(2):392-398.
[9] Choi W S,Ahn J G,Park Y J,et al.A time dependent hydrodynamic device simulator SNU-2D with new discretization scheme and algorithm[J].IEEE Trans Computer-Aided Design,1994,13(7):899-907.
[10] Rosenberg D U.Methods for the numerical solution of partial differential equations[M].New York:American Elsevier,1969.
崭迦掌冢 005年9月12日
刘烨, 王蔷. 1维亚微米弹道二极管在不同外加电压脉冲下的数值模拟[J]. 强激光与粒子束, 2006, 18(4): 680. 刘烨, 王蔷. Transient numerical simulations of one dimensional ballistic diode under different voltages[J]. High Power Laser and Particle Beams, 2006, 18(4): 680.
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