中国激光, 2007, 34 (4): 475, 网络出版: 2007-04-25   

增益开关型微片激光器的时间特性

Temporal Characteristics of the Gain-Switched Microchip Laser
作者单位
浙江大学现代光学仪器国家重点实验室, 浙江 杭州 310027
摘要
从速率方程出发,采用在直流抽运上叠加脉冲抽运的方式,建立激光二极管(LD)抽运的增益开关型Nd:YVO4微片激光器的数学模型,并给出不同抽运条件下输出脉冲的时间特性。数值研究结果表明,当直流抽运速率、脉冲抽运速率和抽运脉宽的变化量在10%以内时,输出脉宽变化不大,而脉冲个数变化较大且与抽运参数呈非线性单调递增关系。利用建立的实验装置,测量了在不同激光二极管驱动电流和调制脉宽时输出脉冲的时间特性,发现驱动电流的增幅在10%以内时,输出脉宽变化小于5%,但输出脉冲个数增加较为明显,且实验结果与数值模拟结果相符。
Abstract
Based on the rate equation, a mathematic model of laser diode (LD) pumped gain-switched Nd:YVO4 microchip laser under pre-pumping together with pulse pumping mechanism is presented. This model well shows the temporal characteristics of output pulses when the pumping parameters vary slightly. The results of numerical simulation indicate that the width of the output pulses changes little when the increase of pumping parameters is below 10%, however, the number of the output pulses increases rapidly and has a nonlinear monotone increasing relation with the pumping parameters. The experimental results of such gain-switched microchip laser are measured under the corresponding pumping conditions. It is found that the numerical and experimental results match with each other very well.
参考文献

[1] . McKinnie, AnnMarie L. Oien, Don M. Warrington et al.. Ti3+ ion concentration and Ti:sapphire laser performance[J]. J. Quantum Electron., 1997, 33(7): 1221-1230.

[2] . . Study on the ps gain-switching a semiconductor laser[J]. Acta Physica Sinica, 1994, 43(4): 580-589.

[3] Wu Qiuyang, Xu Bing, Zhang Zhengquan et al.. Analysis of the temporal performance of a gain-switched four-level laser [J]. Chinese J. Lasers, 1998, A25(8):673~676
吴秋阳,徐冰,张正泉 等. 增益开关型四能级激光器的时间特性分析 [J]. 中国激光, 1998, A25(8):673~676

[4] Sheng Fang, Li Dongming, Chen Jun et al.. Study on a gain-switched Nd3+:YVO4 microchip laser [J]. Chinese J. Lasers, 2004, 31(Suppl.):61~63
盛芳,李东明,陈军 等. 增益开关型Nd3+:YVO4微片激光器的研究[J]. 中国激光, 2004, 31(增刊):61~63

[5] Sheng Fang, Chen Jun, Ge Jianhong et al.. Effect of pumping conditions on output characteristics of a gain-switched Nd3+:YVO4 laser [J]. Opto-Electronic Engineering, 2005, 32(4):28~31
盛芳,陈军,葛剑虹 等. 抽运条件对Nd3+:YVO4增益开关激光器输出特性的影响[J]. 光电工程, 2005, 32(4):28~31

[6] Fang Sheng, Jun Chen, Jianhong Ge. Gain-switching of a LD end-pumped Nd3+:YVO4 microchip laser [C]. SPIE, 2005, 5628:176~181

[7] Jun Zhou, Ting Yu, Jingzi Bi et al.. Diode pumped injection seeded Nd:YAG laser [J]. Chin. Opt. Lett., 2006, 4(5):292~293

[8] Xu Fanghua, Ma Lili, Wang Zhengping et al.. Laser diode-pumped Nd:GdVO4 microchip laser [J]. Chinese J. Lasers, 2005, 32(9):1166~1168
徐方华,马丽丽,王正平 等. 激光二极管抽运Nd:GdVO4微片激光器[J]. 中国激光, 2005, 32(9):1166~1168

[9] Li Haifeng, Zhou Rui, Zhao Pu et al.. 1386 nm continuous wave output from laser diode end-pumped 1386 nm Nd:YVO4 laser [J]. Acta Optica Sinica, 2006, 26(7):1069~1072
李海峰,周睿,赵璞 等. 激光二极管端面抽运Nd:YVO4实现1386 nm连续波激光输出[J]. 光学学报, 2006, 26(7):1069~1072

[10] Walter Koechner. Solid-State Laser Engineering [M]. Beijing: Science Press, 2002. 352~410
W. 克希耐尔. 固体激光工程(中译本)[M]. 北京:科学出版社, 2002. 352~410

[11] . M. Sinnett. An analysis of the maser oscillator equations[J]. J. Appl. Phys., 1962, 33(4): 1578-1581.

[12] F. J. Mcclung, R. W. Hellwarth. Characteristics of giant optical pulsations from ruby [C]. Proc. IEEE, 1963, 51(1):46~53

胡淼, 陈军, 葛剑虹, 陈哲敏, 汪莎. 增益开关型微片激光器的时间特性[J]. 中国激光, 2007, 34(4): 475. 胡淼, 陈军, 葛剑虹, 陈哲敏, 汪莎. Temporal Characteristics of the Gain-Switched Microchip Laser[J]. Chinese Journal of Lasers, 2007, 34(4): 475.

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