Passive mode-locking in semiconductor lasers with saturable absorbers bandgap shifted through quantum well intermixing

Vincenzo Pusino; Michael J. Strain; Marc Sorel

doi:doi:10.1364/PRJ.2.000186

Photonics Research, 2014, 2 (6): 06000186, Published Online: May. 21, 2015

Passive mode-locking in semiconductor lasers with saturable absorbers bandgap shifted through quantum well intermixing Download： 813次

Vincenzo Pusino ^1,*Michael J. Strain ^1,2Marc Sorel ¹

Author Affiliations

¹ School of Engineering, University of Glasgow—Rankine Building, Oakfield Avenue, Glasgow G128LT, UK

² Institute of Photonics, University of Strathclyde, Glasgow G4 0NW, UK

Figures & Tables

Fig. 1. Schematic of the fabricated device geometry.

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Fig. 2. (a) Schematic of the setup used to test the obtained bandgap shift and (b) band edge comparison between nonintermixed and intermixed cases for 2 μm wide waveguides.

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Fig. 3. Comparison between pulses with FWHM of (a) 1.4 ps and (b) 2.7 ps for a SMLL whose blue-detuned SA is 7% of the total cavity length.

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Fig. 4. Color maps show the FWHM of the IAC pulses emitted by the SMLLs with intermixed SAs for absorbers whose length is (left) 1% of the cavity length and (right) 2%.

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Fig. 5. Color maps show the areas where the FWHM of the IAC pulses is lower than 2.5 ps for (a) one SMLL with nonintermixed 7% SA and (b) a device with a blue-detuned 7% SA; (c) and (d) show an enlarged section of the maps for currents between 250 and 350 mA.

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Fig. 6. Color maps show the TBP of the pulses for (a) one SMLL with nonintermixed 7% SA and (b) a device with a blue-detuned 7% SA, for currents between 250 and 350 mA.

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Vincenzo Pusino, Michael J. Strain, Marc Sorel. Passive mode-locking in semiconductor lasers with saturable absorbers bandgap shifted through quantum well intermixing[J]. Photonics Research, 2014, 2(6): 06000186.

Passive mode-locking in semiconductor lasers with saturable absorbers bandgap shifted through quantum well intermixing Download： 813次

Fig. 1. Schematic of the fabricated device geometry.

Fig. 2. (a) Schematic of the setup used to test the obtained bandgap shift and (b) band edge comparison between nonintermixed and intermixed cases for 2 μm wide waveguides.

Fig. 3. Comparison between pulses with FWHM of (a) 1.4 ps and (b) 2.7 ps for a SMLL whose blue-detuned SA is 7% of the total cavity length.

Fig. 4. Color maps show the FWHM of the IAC pulses emitted by the SMLLs with intermixed SAs for absorbers whose length is (left) 1% of the cavity length and (right) 2%.

Fig. 5. Color maps show the areas where the FWHM of the IAC pulses is lower than 2.5 ps for (a) one SMLL with nonintermixed 7% SA and (b) a device with a blue-detuned 7% SA; (c) and (d) show an enlarged section of the maps for currents between 250 and 350 mA.

Fig. 6. Color maps show the TBP of the pulses for (a) one SMLL with nonintermixed 7% SA and (b) a device with a blue-detuned 7% SA, for currents between 250 and 350 mA.

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Passive mode-locking in semiconductor lasers with saturable absorbers bandgap shifted through quantum well intermixing Download： 813次

Fig. 1. Schematic of the fabricated device geometry.

Fig. 2. (a) Schematic of the setup used to test the obtained bandgap shift and (b) band edge comparison between nonintermixed and intermixed cases for 2 μm wide waveguides.

Fig. 3. Comparison between pulses with FWHM of (a) 1.4 ps and (b) 2.7 ps for a SMLL whose blue-detuned SA is 7% of the total cavity length.

Fig. 4. Color maps show the FWHM of the IAC pulses emitted by the SMLLs with intermixed SAs for absorbers whose length is (left) 1% of the cavity length and (right) 2%.

Fig. 5. Color maps show the areas where the FWHM of the IAC pulses is lower than 2.5 ps for (a) one SMLL with nonintermixed 7% SA and (b) a device with a blue-detuned 7% SA; (c) and (d) show an enlarged section of the maps for currents between 250 and 350 mA.

Fig. 6. Color maps show the TBP of the pulses for (a) one SMLL with nonintermixed 7% SA and (b) a device with a blue-detuned 7% SA, for currents between 250 and 350 mA.

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