半导体光电, 2013, 34 (6): 943, 网络出版: 2014-01-02  

导带不连续性对InGaAsP/InGaAs UTCPD带宽的影响

Impacts of the Conduction Band Discontinuity on Bandwidth of HighSpeed InGaAsP/InGaAs Unitravelingcarrier Photodetector
作者单位
电子科技大学 光电信息学院, 成都 610054
引用该论文

陈代尧, 余学才, 汪平河, 刘永. 导带不连续性对InGaAsP/InGaAs UTCPD带宽的影响[J]. 半导体光电, 2013, 34(6): 943.

CHEN Daiyao, YU Xuecai, WANG Pinghe, LIU Yong. Impacts of the Conduction Band Discontinuity on Bandwidth of HighSpeed InGaAsP/InGaAs Unitravelingcarrier Photodetector[J]. Semiconductor Optoelectronics, 2013, 34(6): 943.

参考文献

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陈代尧, 余学才, 汪平河, 刘永. 导带不连续性对InGaAsP/InGaAs UTCPD带宽的影响[J]. 半导体光电, 2013, 34(6): 943. CHEN Daiyao, YU Xuecai, WANG Pinghe, LIU Yong. Impacts of the Conduction Band Discontinuity on Bandwidth of HighSpeed InGaAsP/InGaAs Unitravelingcarrier Photodetector[J]. Semiconductor Optoelectronics, 2013, 34(6): 943.

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