MBE法制备VO2薄膜及其中红外调制深度测量
刘志伟, 路远, 侯典心, 邹崇文. MBE法制备VO2薄膜及其中红外调制深度测量[J]. 发光学报, 2018, 39(7): 942.
LIU Zhi-wei, LU Yuan, HOU Dian-xin, ZOU Chong-wen. VO2 Thin Films Prepared by MBE and Measurements of Mid-infrared Modulation Depth[J]. Chinese Journal of Luminescence, 2018, 39(7): 942.
[1] MORIN F J. Oxide which show a metal-insulator transition at theneel temperature [J]. Phys. Rev. Lett., 1959, 13(1):34-36.
[2] SRI S, SAI L, KUMAR V, et al.. Study of nolinear optical properties of soidium dopded V2O5 nano particles [J]. Int. J. Nanotechnol. Appl., 2014, 4(3):21-28.
[3] GOODENOUGH J B. The two components of the crystal graphic transition in VO2 [J]. Solid State Chem., 1971, 3:490-500.
[4] MAAZA M, HAMIDI D, GIBAUD A, et al.. Optical activity of VO2 based nanophotonics [J]. ICTON IEEE, 2011, 13:1-7.
[5] 徐凯, 路远, 凌永顺, 等. 氧化热处理对 VO2薄膜红外光学相变特性的影响 [J]. 激光与红外, 2015, 45(1):53-57.
XU K, LU Y, LING Y S, et al.. Effects of oxidational annealing on infrared optical phase transition properties of VO2 thin films [J]. Laser Infrared, 2015, 45(1):53-57. (in Chinese)
[6] HUANG Z L, CHEN S H, LV C H, et al.. Infrared characteristics of VO2 thin film for smart window and laser protection applications [J]. Appl. Phys. Lett., 2012, 101(19):191905-1-4.
[7] 王雅琴, 姚刚, 黄子健, 等. 用于红外激光防护的高开关率VO2薄膜 [J]. 物理学报, 2016, 65(5):057102-1-6.
WANG Y Q, YAO G, HUANG Z J, et al.. Infrared laser protection of multi-wavelength with high optical switching efficiency VO2 film [J]. Acta Phys. Sinica, 2016, 65(5):057102-1-6. (in Chinese)
[8] MARVEL R E, APPAVOO K, CHOI B K, et al.. Electron-beam deposition of vanadium dioxide thin flims [J]. Appl. Phys. A, 2013, 111:975-981.
[9] 王玉泉. 钒氧化物纳米材料的制备和性能 [D]. 北京:清华大学, 2008.
WANG Y Q. Research on The Preparation and Properties of Nano Vanadium Oxide Materials [D]. Beijing: Tsinghua University, 2008. (in Chinese)
[10] 后顺宝, 胡明, 吕志军, 等. 快速热处理对磁控溅射VO2薄膜光电特性的影响 [J]. 中国激光, 2012, 39(1):0107002-1-6.
[11] BEYDAGHYAN G, BASQUE V, ASHIRT P V. High contrast thermochromic switching in vanadium dioxide(VO2) thin films deposited on indium tin oxide substrates [J]. Thin Solid Films, 2012, 522:204
[12] HASHEMI M R, BERRY C W, MERCED E, et al.. Direct measurement of vanadium dioxide dielectric properties in W-band [J]. Infrared Milli Terahz Waves, 2014, 35:486-492.
[13] 王海方, 李毅, 蒋群杰, 等. 脉冲激光沉积法制备二氧化钒薄膜的研究进展 [J]. 激光与光电子学进展, 2009, 46(6):48-53.
WANG H F, LI Y, JIANG Q J, et al.. Research progress of vanadium dioxide thin film fabricated by pulsed laser deposition [J]. Laser Optoelectron. Prog., 2009, 46(6):48-53. (in Chinese)
[14] 颜家振, 黄婉霞, 李宁. 复合薄膜的结构和红外光学性质研究 [J]. 红外与激光工程, 2013, 42(9):2485-2489.
YAN J Z, HUANG W X, LI N. Structure and infrared optical properties of VO2/TiO2 multilayer film [J]. Infrared Laser Eng., 2013, 42(9):2485-2489. (in Chinese)
[15] CHEN F H, FAN L L, CHEN S, et al.. Control of the metal-insulator transition in VO2 epitaxial film by modifying carrier density [J]. ACS Appl. Mater. Interf., 2015(7):6875.
刘志伟, 路远, 侯典心, 邹崇文. MBE法制备VO2薄膜及其中红外调制深度测量[J]. 发光学报, 2018, 39(7): 942. LIU Zhi-wei, LU Yuan, HOU Dian-xin, ZOU Chong-wen. VO2 Thin Films Prepared by MBE and Measurements of Mid-infrared Modulation Depth[J]. Chinese Journal of Luminescence, 2018, 39(7): 942.