锑化铟焦平面探测器是红外成像系统的重要组成部分，对红外成像的成本和性能都有重要影响。锑化铟晶片的质量及均匀性决定了探测器的性能。通过霍尔效应测试、低温探针法以及微波光电导衰退法研究了锑化铟晶片的电学性能均匀性。结果表明，所制备的锑化铟晶片的载流子浓度和电子迁移率的面分布较均匀，但低温电阻率以及少子寿命的分布呈现较小的非均匀性变化，这主要与锑化铟生长过程中的杂质分凝有关。

InSb focal plane detector is an important part of infrared imaging system, which has a significant impact on the cost and performance of infrared imaging. The quality and uniformity of InSb wafer determine the performance of the detector. Hall effect test, low temperature probe method and microwave photoconductivity method are used to study the electrical uniformity of InSb wafer. The results show that the surface distribution of carrier concentration and electron mobility is uniform, but the low temperature resistivity and minority carrier lifetime distribution show a small non-uniformity change, which is mainly related to impurity segregation during the growth of InSb.