锑化铟晶片的电学均匀性研究
[1] 赵超, 赵秀峰, 柏伟. InSb衬底表面的氧化层研究[J]. 红外, 2017, 38(1): 12-17.
[2] 柏伟, 赵超, 龚志红. InSb晶片的机械加工损伤层研究 [J]. 红外, 2017, 38(1): 6-11.
[3] 张艳辉. 图像识别在微区四探针测试技术中的应用 [D]. 天津: 河北工业大学, 2004.
[4] 俞振中, 金刚, 陈新强, 等. 锑化铟单晶的小平面生长及孪晶 [J]. 物理学报, 1980, 29(1): 11-18.
[5] Burton J A, Prim R C, Slichter W P. The Distribution of Solute in Crystals Grown from the Melt. Part I. Theoretical [J]. Journal of Chemical Physics, 1953, 21(11): 1987-1991.
[6] Levan P D, Sood A K, Wijewarnasuriya P, et al. Interface and Facet Control during Czochralski Growth of (111) InSb Crystals for Cost Reduction and Yield Improvement of IR Focal Plane Array Substrates [C]. SPIE, 2014, 9220:922003.
[7] Wu X L, Zhang K F, Huang Y M, et al. Recombination Lifetime Characterization and Mapping of p-i-n In P/In0.53Ga0.47As/InP Mesa Structure Using the Microwave Photoconductivity Decay (μ-PCD) Technique [C]. SPIE, 2008, 6221: 62211C.
[8] 于丽君, 段晋胜. 多晶硅片少子寿命的影响因素研究与分析[J]. 电子工业专用设备, 2012, 20(6): 26-30.
董涛, 赵超, 柏伟, 申晨, 吴卿. 锑化铟晶片的电学均匀性研究[J]. 红外, 2020, 41(11): 17. DONG Tao, ZHAO Chao, BAI Wei, SHEN Chen, WU QING. Study on Electrical Uniformity of InSb Wafer[J]. INFRARED, 2020, 41(11): 17.