InAs/GaSb Ⅱ类超晶格材料台面腐蚀

研究了InAs/GaSb Ⅱ类超晶格的几种台面腐蚀方法.实验所用的InAs/GaSb Ⅱ类超晶格材料是使用分子束外延设备生长的, 材料采用PIN结构, 单层结构为8ML InAs/8ML GaSb.腐蚀方法分为干法刻蚀和湿法腐蚀两大类.干法刻蚀使用不同的刻蚀气氛, 包括甲基、氯基和氩气；湿法化学腐蚀采用了磷酸系和酒石酸酸系的腐蚀液.腐蚀后的材料台阶高度是使用α台阶仪测量, 表面形貌通过晶相显微镜和扫描电镜表征.经过对比研究认为, 干法刻蚀中甲基气氛刻蚀后的台面平整, 侧壁光滑, 侧壁角度为约80度, 台阶深度易控制, 适合深台阶材料制作.湿法腐蚀中磷酸系腐蚀效果好, 台面平整, 下切小, 表面无残留, 适用于焦平面红外器件制作工艺.

Abstract

Several etching methods for mesa of InAs/GaSb superlattice in IR FPA were investigated. The InAs/GaSb superlattices used here were prepared by molecular beam epitaxy. A standard PIN device structure was applied in all samples with a period of 8ML InAs/8ML GaSb. Inductively coupled plasma etching with CH4, Cl2 and Ar as reactive gases and wet etching with solution including orthophosphoric acid and tartaric acid were compared. The mesa height was measured by α-step meter system, while surface morphology was evaluated by microscope and scanning electron microscopy. The results shows that CH4 based etching can give a smooth surface and slippery lateral with an 80 degree angle. Furthermore, the mesa depth was easy to control. This method is suitable for fabricating deep mesa device. It has also been found that etching with the solution based on orthophosphoric acid can obtain a smoother, clear surface and low in the longitudinal. It is a better way to fabricate IR FPA.

参考文献

[1] HERRES N,FUCHS F,SCHMITZ J, et al. Effect of interfacial bonding on the structural and vibrational properties of InAs/GaSb superlattices [J]. Phys. Rev. B. 1996, 53: 15688-15695.

[2] GUO Jie, PENG Zhen-Yu, LU Zheng-Xiong, et al, Short Period InAs/GaSb Superlattice Infrared Detector on GaAs Substrates [J]. J.Infrared Millim.Waves (郭杰,彭震宇,鲁正雄等. GaAs基短周期InAs/GaSb超晶格红外探测器研究. 红外与毫米波学报), 2009,28(3): 165-168.

[3] PLIS E,RODRIGUEZ JB,BALAKRISHNAN G, et al. Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate [J]. Semicond. Sci. Technol.2010, 25: 085010.

[4] ZHOU Yi, CHEN Jian-Xin, XU Qing-Qing, et al, Long wavelength infrared detector based on Type-II InAs/GaSb superlattice [J]. J.Infrared Millim.Waves (周易,陈建新,徐庆庆, 等.长波InAs/GaSb Ⅱ类超晶格红外探测器.红外与毫米波学报), 2013, 32 (3): 210-213.

[5] HUANG E, HOFFMAN D,NGUYEN, BM et al. Surface leakage reduction in narrow band gap type-II antimonide based superlattice photodiodes [J]. App. Phys. Lett. 2009, 94(5): 053506.

[6] HERRERA M, CHI M. Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall [J]. App. Phys. Lett. 2008, 93: 093106.

[7] CHAGHI R,CERVERA C,AT-KACI H, et al. Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes [J]. Semicond. Sci. Technol. 2009, 24, 065010.

[8] VANDER DE,CHEUNG R. Dry etching and induced damage [J]. Microelectron Eng, 1996, 32(1-4): 241-253.

[9] LV Yan-Qiu, YUE Fang-Yu, HONG Xue-Kun, et al. Surface damage and removal of Ar+ etched InGaAs, n-InP and p-InP [J]. Chinese journal of semiconductors. (吕衍秋,越方禹,洪学鹍等.Ar+离子刻蚀对InGaAs, n-InP和p-InP表面损伤及消除.半导体学报), 2007, 28(1): 70-74.

[10] XU Zhao-Peng. Chemic etching of GaAs, GaP, InP, InGaAsP, A1GaAs and InA1GaAs [J]. Research and progress os SSE (许兆鹏.GaAs、GaP、InP、InGaAsP、A1GaAs、InA1GaAs 的化学腐蚀研究．固体电子学研究与进展), 1996, 16 (1): 56-63.

[11] CAO X, THAYNE. Novel high uniformity highly reproducible non-selective wet digital gate recess etch process for InP HEMTs [J]. Microelectronic Eng, 2003, 67: 333-337.

张利学, 孙维国, 吕衍秋, 张向锋, 姚官生, 张小雷, 司俊杰. InAs/GaSb Ⅱ类超晶格材料台面腐蚀[J]. 红外与毫米波学报, 2014, 33(5): 472. ZHANG Li-Xue, SUN Wei-Guo, LV Yan-Qiu, ZHANG Xiang-Feng, YAO Guan-Sheng, ZHANG Xiao-Lei, SI Jun-Jie. Mesa etching of type Ⅱ InAs/GaSb superlattice[J]. Journal of Infrared and Millimeter Waves, 2014, 33(5): 472.

InAs/GaSb Ⅱ类超晶格材料台面腐蚀

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