折射率调制脉冲射线探测技术原理验证
[2] Vernon S P, Lowry M E, Baker K L, et al. X-ray bang-time and fusion reaction history at picosecond resolution using RadOptic detection[J]. Review of Scientific Instruments, 2012, 83:10D307.
[3] 李显尧,俞育德,余金中.硅基热光、电光、全光开关及其阵列的研究进展[J].物理, 2013, 42(4):272-279.(Li Xianyao, Yu Yude, Yu Jinzhong. Thermo-optic, electro-optic, and all-optical switches and arrays. Physics, 2013, 42(4):272-279)
[4] Hernandez V J, Bennett C V, Moran B D, et al. 104 MHz rate single-shot recording with subpicosecond resolution using temporal imaging[J]. Optics Express, 2013, 21(1):196-203.
[5] Sabbah A J, Riffe D M. Femtosecond pump-probe reflectivity study of silicon carrier dynamics[J]. Physical Review B, 2002, 66:165217.
[6] 李名复.半导体物理学[M].北京:科学出版社, 1991.(Li Mingfu. Semiconductor Physics. Beijing: Science Press, 1991)
[8] 赵冷柱,张希成.高等半导体物理学[M].上海:华东师范大学出版社, 1992.(Zhao Lengzhu, Zhang Xicheng. Advanced Semiconductor Physics. Shanghai: East China Normal University Press, 1992)
[9] 白藤纯嗣.半导体物理基础[M].北京:高等教育出版社, 1982.(Shirato Jutsugu. Basics of Semiconductor Physics. Beijing: Higher Education Press, 1982)
[10] Yu Z G, Krishnamurthy S, Guha S. Photoexcited-carrier-induced refractive index change in small bandgap semiconductors[J]. J Opt Soc Am B, 2006, 23(11):2356-2360.
[11] Bertuccio G, Maiocchi D. Electron-hole pair generation energy in gallium-arsenide by X and γ photons[J]. J Appl Phys, 2002, 92:1248-1255.
[12] Henry C H, Logan R A, Bertness K A. Spectral dependence of the change in refractive index due to carrier injection in GaAs lasers[J]. J Appl Phys, 1981, 52:4457-4461.
[13] 叶良修.半导体物理学[M].北京:高等教育出版社, 2007.(Ye Liangxiu. Semiconductor Physics. Beijing: Higher Education Press, 2007)
彭博栋, 宋岩, 盛亮, 王培伟, 袁媛, 黑东炜, 赵军. 折射率调制脉冲射线探测技术原理验证[J]. 强激光与粒子束, 2014, 26(11): 114005. Peng Bodong, Song Yan, Sheng Liang, Wang Peiwei, Yuan Yuan, Hei Dongwei, Zhao Jun. Validation of radiation detecting technology based on refractive index modulation[J]. High Power Laser and Particle Beams, 2014, 26(11): 114005.