近红外激光薄膜滤光片的研制

李候俊; 徐均琪; 王建; 李绵; 苏俊宏

doi:doi:10.3788/gzxb20194809.0931001

光子学报, 2019, 48 (9): 0931001, 网络出版: 2019-10-12

近红外激光薄膜滤光片的研制

Fabrication of Nearinfrared Laser Film Filter

论文大纲

李候俊 ^*徐均琪王建李绵苏俊宏

作者单位

西安工业大学陕西省薄膜技术与光学检测重点实验室, 西安 710072

摘要

以双抛Si片为基底, 采用离子束辅助热蒸发沉积技术研制了1.2~3 μm波段激光薄膜滤光片.采用长波通滤光片与减反射膜相结合的薄膜样品设计方法, 高、低折射率材料分别选用ZnS和MgF2, 综合考虑光谱特性和电场强度分布, 使用TFCale膜系软件设计出1.064 μm高反、1.2~3 μm波段增透的长波通滤光片.长波通膜系膜系结构为G|4H2L1.5H2L2H1.5L2H4L|A, 减反射膜膜系结构为G|3.5H3.5L|A.最终实现1.2~3 μm波段峰值透过率达98.48%, 平均透过率为92.35%, 1.064 μm处透过率为5.09%的光谱特性.对薄膜样品分别采用离子束处理和退火处理, 发现适当的工艺参数, 有助于提高薄膜激光损伤阈值, 当退火温度为250℃时, 其激光损伤阈值可达6.3 J/cm2.本文研究可为近红外薄膜滤光片设计和制备提供参考.

Abstract

A 1.2~3μm band laser film filter was developed on doubleside polished Si substrate using the ion beamassisted thermal evaporation deposition technique. The film sample was designed combination of long wave pass filter film and antireflection film. The high and low refractive index materials are ZnS and MgF2 monolayer films, respectively. Considering the spectral properties and intensity distribution of electric field, the 1.064 μm high reflection and 1.2~3 μm antireflection long wave pass filter were designed by a TFCale software. The longpass film system structure and the antireflection film structure are G|4H2L1.5H2L2H1.5L2H4L|A and G|3.5H3.5L|A, respectively. The results show that the peak transmissivity can approach 98.48%, the average transmissivity is 92.35% at the wavelength of 1.2~3 μm, and the transmissivity is 5.09% at the 1.064μm band. By ion beam and annealing treatment, It was found that the appropriate processing parameters contributed to the improvement of the laser induced damage threshold, when the annealing temperature is 250℃, the laser induced damage threshold is 6.3 J/cm2. This research provides application value for the design and preparation of near infrared thin film filters.

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李候俊, 徐均琪, 王建, 李绵, 苏俊宏. 近红外激光薄膜滤光片的研制[J]. 光子学报, 2019, 48(9): 0931001. LI Houjun, XU Junqi, WANG Jian, LI Mian, SU Junhong. Fabrication of Nearinfrared Laser Film Filter[J]. ACTA PHOTONICA SINICA, 2019, 48(9): 0931001.

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