中国激光, 2013, 40 (2): 0202004, 网络出版: 2013-01-25   

带有多环耦合结构的环形半导体激光器

Ring Semiconductor Laser with Multi-Ring Coupling Structure
作者单位
1 长春理工大学高功率半导体激光国家重点实验室, 吉林 长春 130022
2 吉林师范大学信息技术学院, 吉林 四平 136000
摘要
为了提高半导体激光器的光谱纯度、亮度和工作稳定性,对多环耦合结构的半导体激光器进行了研究。采用多环耦合与弯曲有源波导共端输出结构,使得环形结构激光器输出在光谱纯度、亮度和工作稳定性方面得到了大幅改善。器件水平远场发散角度为2.7°,输出功率达10 mW,在821 nm处的谱线宽度为0.26 nm,实现Q因子达2737。该多环耦合结构器件具有电流对光谱调制特性,调制范围接近15 nm,同时电流对谱线宽度也有一定的调制作用,调制能力在0.2 nm左右。优化后器件输出的谱线宽度变窄,达到0.2 nm,实现Q因子达4040。
Abstract
To improve the spectral purity, brightness and stability of semiconductor lasers, multi-ring coupling structure of the semiconductor laser is investigated. Based on the structure of multi-ring coupling and output of the curved active waveguide, spectral purity brightness, and output stability of ring laser structure are greatly improved. The parallel far-field divergence angle of slow axis is up to 2.7° and output power of 10 mW is obtained. Spectral width reaches 0.26 nm at 821 nm, the Q factor is up to 2737. It is found that the multi-ring coupling structure laser device owns current modulation characteristics with its spectrum, whose modulation range is closed to 15 nm. Meanwhile, the operation current owns a certain modulation to spectral width, whose modulation capability is about 0.2 nm. The optimized multi-ring coupling structure laser output spectral width narrowed to 0.2 nm and a Q factor of 4040 is obtained.
参考文献

[1] S. Matsuo, T. Segawa, T. Kakitsuka et al.. Integrated filtered feedback tunable laser using double-ring-resonator-coupled filter[C]. IEEE 21st International Semiconductor Laser Conference, 2008. 155~156

[2] M. Sorel, P. J. R. Laybourn, G. Giuliani et al.. Unidirectional bistability in semiconductor waveguide ring lasers[J]. Appl. Phys. Lett., 2002, 80(17): 3051~3053

[3] M. Sorel, G. Giuliani, A. Scir′e et al.. Operating regimes of GaAs/AlGaAs semiconductor ring lasers: experiment and model[J]. IEEE J. Quantum Electron., 2003, 39(10): 1187~1195

[4] Martin T. Hill, Harmen J. S. Dorren, Tjibbe de Vries et al.. A fast low-power optical memory based on coupled micro-ring lasers[J]. Nature, 2004, 432: 206~209

[5] S. Fürst, S. Yu, M. Sorel. Fast and digitally wavelength-tunable semiconductor ring laser using a monolithically integrated distributed Bragg reflector[J]. IEEE Photon. Technol. Lett., 2008, 20(23): 1926~1928

[6] B. Docter, J. Pozo, S. Beri et al.. Discretely tunable laser based on filtered feedback for telecommunication applications[J]. IEEE J. Sel. Topics Quantum Electron., 2010, 16(5): 1405~1412

[7] L. A. Coldren, G. A. Fish, Y. Akulova et al.. Tunable semiconductor lasers: a tutorial[J]. J. Lightwave Technol., 2004, 22(1): 193~202

[8] L. Liu, R. Kumar, K. Huybrechts et al.. An ultrasmall, low-power, all-optical flip-flop memory on a silicon chip[J]. Nature Photon., 2010, 4(3): 182~187

[9] X. Leijtens, JePPIX: the platform for indium phosphide-based photonics[J]. Optoelectronics, 2011, 5(5): 202~206

[10] K. Thakulsukanant, B. Li, M. I. Memon et al.. All-optical label swapping using bistable semiconductor ring laser in an optical switching node[J]. J. Lightwave Technol., 2009, 27(6): 631~638

[11] J. Javaloyes, S. Balle. Emission directionality of semiconductor ring lasers: a traveling-wave description[J]. IEEE J. Quantum Electron., 2002, 45(5): 431~438

[12] M. Sorel, P. J. R. Laybourn, A. Scirè et al.. Alternate oscillations in semiconductor ring lasers[J]. Opt. Lett., 2002, 27(22): 1992~1994

[13] 乔忠良, 薄报学, 高欣 等. 无吸收模式滤波结构高亮度大功率宽条形半导体激光器[J]. 中国激光, 2011, 38(4): 0402003

    Qiao Zhongliang, Bo Baoxue, Gao Xin et al.. High brightness high power broad area semiconductor lasers with no-absorption mode filter[J]. Chinese J. Lasers, 2011, 38(4): 0402003

[14] 乔忠良, 薄报学, 么艳平 等. 基于AlxNy绝缘介质膜的新型窗口大功率半导体激光器[J]. 中国激光, 2009, 36(9): 2277~2281

    Qiao Zhongliang, Bo Baoxue, Me Yanping et al.. High power semiconductor lasers of new window on insulation film of AlxNy[J]. Chinese J. Lasers, 2009, 36(9): 2277~2281

[15] 李辉, 刘国军, 曲轶 等. 高性能高光束质量808 nm锥形半导体激光器[J]. 中国激光, 2009, 36(s2): 11~13

    Li Hui, Liu Guojun, Qu Yi et al.. Deposition of AlN film for AR coating of semiconductor lasers[J]. Chinese J. Laser, 2009, 36(s2): 11~13

张斯钰, 乔忠良, 周路, 王云华, 贾宝山, 刘春玲, 薄报学, 高欣, 曲轶. 带有多环耦合结构的环形半导体激光器[J]. 中国激光, 2013, 40(2): 0202004. Zhang Siyu, Qiao Zhongliang, Zhou Lu, Wang Yunhua, Jia Baoshan, Liu Chunling, Bo Baoxue, Gao Xin, Qu Yi. Ring Semiconductor Laser with Multi-Ring Coupling Structure[J]. Chinese Journal of Lasers, 2013, 40(2): 0202004.

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