增益饱和反射型量子点半导体光放大器高通特性

尹雨; 凌云; 李浩; 杜晓君; 邱昆; 郑勉

doi:doi:10.3788/gzxb20184701.0125003

光子学报, 2018, 47 (1): 0125003, 网络出版: 2018-01-30

增益饱和反射型量子点半导体光放大器高通特性

High-pass Properties of Gain Saturation Reflective Quantum Dot Semiconductor Optical Amplifier

论文大纲

尹雨 ^1,*凌云 ¹李浩 ¹杜晓君 ¹邱昆 ¹郑勉 ²

作者单位

¹ 电子科技大学光纤传感与通信教育部重点实验室, 成都 610054

² 西南石油大学电气信息学院, 成都 610500

摘要

反射型量子点半导体光放大器(R-QDSOA)相较于传统RSOA具有皮秒级的载流子恢复速率和几十GHz的调制带宽, 将其应用在高速的波分复用无源光网络(WDM-PON)中具有巨大的潜力. 根据R-QDOSA的载流子速率方程和光场传输方程, 建立了R-QDSOA的仿真模型, 对其在增益饱和情况下的高通特性进行研究. 研究结果表明: 通过增加输入光功率、最大模式增益、有源区长度和减小注入电流, 可提高最大信号增益和3 dB截止频率; 通过合理的参数设置, R-QDSOA的3 dB截止频率可高达10GHz以上. 该研究在无色WDM-PON的再调制方面展现了巨大的优势, 并对提高R-QDSOA调制带宽具有理论指导意义.

Abstract

Compared to traditional RSOA, the reflective quantum dot semiconductor optical amplifier (R-QDSOA) has the picosecond carrier recovery rate and the modulation bandwidth of dozens of GHz. It is reveal that R-QDSOA has a great application prospect in high-speed WDM-PON. The simulation model of R-QDSOA is built according to the carrier rate equations and the light field transmission equations. And then the high-pass properties under the condition of gain saturation are investigated. The results show that the maximum signal gain and 3dB cutoff frequency can be improved by increasing the input optical power, maximum mode gain, active area length and reducing the injection current; the 3dB cutoff frequency of the R-QDSOA can achieve larger than 10GHz with reasonable parameter. This research makes R-QDSOA a promising candidate for re-modulation scheme of colorless WDM-PON and has theoretical significance for improving the modulation bandwidth of R-QDSOA.

参考文献

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尹雨, 凌云, 李浩, 杜晓君, 邱昆, 郑勉. 增益饱和反射型量子点半导体光放大器高通特性[J]. 光子学报, 2018, 47(1): 0125003. YIN Yu, LING Yun, LI Hao, DU Xiao-jun, QIU Kun, ZHENG Mian. High-pass Properties of Gain Saturation Reflective Quantum Dot Semiconductor Optical Amplifier[J]. ACTA PHOTONICA SINICA, 2018, 47(1): 0125003.

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