光学学报, 1996, 16 (8): 1173, 网络出版: 2006-12-04
VO2薄膜对TEACO2激光响应特性的实验研究
Experemental Study of Response Properties of VO2Films to TEA CO2Laser
摘要
报道了VO2薄膜在TEA CO2激光照射下的相变特性的实验研究。结果表明：对于本文镀制的VO2薄膜，在偏置温度为52 ℃条件下，TEA CO2激光入射能量密度为150 mJ/cm2时，可使VO2薄膜发生相变。响应时间＜50 ns，恢复时间≈200 μｓ。
Abstract
This paper reports the experemental study of phase transition properties of VO 2 films in irradiation of TEA CO 2 laser. The experemental results show that at biasing temperature 52 ℃, incident fluence of 150 mJ/cm 2 for TEA CO 2 laser phase transition can be occured from semiconductor state to metal state for our VO 2 films. Response time <50 ns, restoration time≈200 μs.
查子忠, 王骐, 李学春, 王军. VO2薄膜对TEACO2激光响应特性的实验研究[J]. 光学学报, 1996, 16(8): 1173. 查子忠, 王骐, 李学春, 王军. Experemental Study of Response Properties of VO2Films to TEA CO2Laser[J]. Acta Optica Sinica, 1996, 16(8): 1173.
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