Author Affiliations
Abstract
1 Key Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 School of Physics and Physical Engineering, Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Qufu Normal University, Qufu 273165, China
We report the InAs/GaAs quantum dot laterally coupled distributed feedback (LC-DFB) lasers operating at room temperature in the wavelength range of 1.31 µm. First-order chromium Bragg gratings were fabricated alongside the ridge waveguide to obtain the maximum coupling coefficient with the optical field. Stable continuous-wave single-frequency operation has been achieved with output power above 5 mW/facet and side mode suppression ratio exceeding 52 dB. Moreover, a single chip integrating three LC-DFB lasers was tentatively explored. The three LC-DFB lasers on the chip can operate in single mode at room temperature, covering the wavelength span of 35.6 nm.
InAs quantum dot laterally coupled distributed feedback laser Chinese Optics Letters
2023, 21(1): 011402
1 曲阜师范大学物理工程学院 山东省激光偏光与信息技术重点实验室, 山东 曲阜 273165
2 中国科学院大学 信息功能材料国家重点实验室, 上海 200050
3 中国科学院 上海微系统与信息技术研究所, 上海 200050
研究了InGaAs/GaAs/InGaP 量子阱激光器在不同温度下的电流-电压特性, 并建立了一个理论模型进行描述。实验所用激光器腔长为0.3 mm, 脊条宽度为3 μm。实验测量得到该激光器在15~100 K的电压温度系数(dV/dT)为7.87~8.32 mV/K, 在100~300 K的电压温度系数为2.93~3.17 mV/K。由理论模型计算得到该激光器在15~100 K的电压温度系数为2.56~2.75 mV/K, 在100~300 K的电压温度系数为3.91~4.15 mV/K。在100~300 K, 实验测量与理论模型计算得出的电压温度系数接近, 理论模型能较好地模拟激光器的温度电压特性; 但在15~100 K相差较大, 还需要进一步完善。
量子阱激光器 低温 温度电压特性 quantum well laser InGaAs/GaAs/InGaP InGaAs/GaAs/InGaP low temperature voltage-temperature characteristics
