InGaAs/GaAs/InGaP量子阱激光器的温度电压特性

研究了InGaAs/GaAs/InGaP 量子阱激光器在不同温度下的电流-电压特性, 并建立了一个理论模型进行描述。实验所用激光器腔长为0.3 mm, 脊条宽度为3 μm。实验测量得到该激光器在15~100 K的电压温度系数(dV/dT)为7.87~8.32 mV/K, 在100~300 K的电压温度系数为2.93~3.17 mV/K。由理论模型计算得到该激光器在15~100 K的电压温度系数为2.56~2.75 mV/K, 在100~300 K的电压温度系数为3.91~4.15 mV/K。在100~300 K, 实验测量与理论模型计算得出的电压温度系数接近, 理论模型能较好地模拟激光器的温度电压特性; 但在15~100 K相差较大, 还需要进一步完善。

Abstract

The current-voltage characteristics of an InGaAs/GaAs/InGaP quantum well laser at different temperatures have been investigated. A theoretical model has been developed to simulate the current-voltage characteristics of the laser. The length of the laser cavity utilized in the experiment is 0.3 mm, and the ridge width of the laser is 3 μm. Experimental voltage-temperature coefficients (dV/dT) of the laser are from 7.87 to 8.32 mV/K within 15-100 K, and are from 2.93 to 3.17 mV/K within 100－300 K. Theoretical voltage-temperature coefficients of the laser in the range of 15－100 K are 2.56 to 2.75 mV/K, and in the range of 100－300 K are 3.91 to 4.15 mV/K. Within 100－300 K, the theoretical voltage-temperature coefficients are close to the experimental coefficients. However, within 15－100 K, there are large differences between the theoretical coefficients and experimental ones, which need to be improved.

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李金友, 王海龙, 杨锦, 曹春芳, 赵旭熠, 于文富, 龚谦. InGaAs/GaAs/InGaP量子阱激光器的温度电压特性[J]. 发光学报, 2020, 41(8): 971. LI Jin-you, WANG Hai-long, YANG Jin, CAO Chun-fang, ZHAO Xu-yi, YU Wen-fu, GONG Qian. Voltage-temperature Characteristics of InGaAs/GaAs/InGaP Quantum Well Laser[J]. Chinese Journal of Luminescence, 2020, 41(8): 971.

InGaAs/GaAs/InGaP量子阱激光器的温度电压特性

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