Author Affiliations
Abstract
1 Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057, China
2 Guangdong Provincial Key Laboratory of Optomechatronics, Shenzhen 518057, China
3 Shenzhen Raybow Optoelectronics Co., Ltd., Shenzhen 518055, China
High power laser diodes (LDs) with a lasing wavelength between 700 and 780 nm have great potential in various medical uses. Here, we report our recent efforts in developing an InGaAsP/AlGaInP-based commercial high power edge-emitting LD, which has 755 nm emission peak with a world-record continuous wave output power of 12.7 W, the highest reported so far. The lack of Al atoms in the active region significantly lowers the chance of catastrophic optical damage during high power laser operation. Meanwhile, with an accumulated 3800 h running time, our ongoing aging tests reveal excellent reliability of our devices.
140.2020 Diode lasers 140.5960 Semiconductor lasers Chinese Optics Letters
2019, 17(6): 061403
1 深圳清华大学研究院， 广东 深圳 518057
2 深圳瑞波光电子有限公司， 广东 深圳 518055
3 广东省光机电一体化重点实验室， 广东 深圳 518057
设计并制作了波长为976 nm的宽条大功率半导体激光芯片。采用非对称宽波导外延结构设计及金属有机化学气相外延技术生长了低损耗、高效率的外延材料。制备了190 μm发光区宽度、4 mm腔长、976 nm波长的半导体激光芯片，并将其封装为COS器件。测试结果表明：封装器件在室温下的阈值电流为1.05 A，斜率效率为1.12 W/A，最高电光转换效率可达到68.5%; 在40 ℃、19.5 W功率输出时的电光转换效率可以达到60%; 9个器件在40 ℃和15 A电流下老化4740 h后，无一失效，而且老化前后的功率-电流曲线和光谱没有变化，证明该激光芯片具极高的稳定性和可靠性。
激光器 半导体激光器 电光转换效率 亮度 腔面灾变功率
