The current-voltage (I-V) characteristics of 4H-SiC metal-semiconductor-metal (MSM) ultraviolet photodetector with different finger widths and spacings, different carrier concentrations and thicknesses of n-type epitaxial layer are simulated. The simulation results indicate that the dark current and the photocurrent both increase when the finger width increases. But the effect of finger width on the dark current is more significant. On the other hand, the effect of finger spacing on the photocurrent is more significant. When the finger spacing increases, the photocurrent decreases and the dark current is almost changeless. In addition, it is found that the smaller the carrier concentration of n-type epitaxial layer is, the smaller the dark current and the larger the photocurrent will be. It is also found that I-V characteristics of MSM detector also depend on the epitaxial layer thickness. The dark current of detector is smaller and the photocurrent is larger when the epitaxial layer thickness is about 3 \mum.

用MEDICI软件对金属-半导体-金属(MSM)结构4H-SiC紫外(UV)探测器的I-V特性以及光谱响应等特性进行了模拟与分析,并探讨了金属电极的宽度、电极间距以及外延层厚度对探测器响应度的影响。结果表明,室温下该探测器的暗电流线性密度达到10-13 A/μm,且在不同电压下光电流至少比暗电流大两个数量级; 探测器的光谱响应范围为200～400 nm,在347 nm处响应度达到极大值; 增大指宽或者减小指间距可以提高探测器的响应度; 当波长小于峰值波长时外延层厚度对探测器的响应度基本没影响,而当波长大于峰值波长时随着外延层厚度的增大探测器的响应度有所增大。

采用传统固相反应法制备PZT铁电材料,并制作成平行平板无源电容器结构,在ELV-8电子直线加速器上进行了总剂量效应辐照实验.结果表明:样片经过不同强度高能高速直流电子束辐照后的电滞回线随着辐照强度的增加,电滞回线所包围的面积逐渐减小,饱和极化强度、剩余极化强度和矫顽场呈线性减小.其中当辐照剂量为1×108rad(Si)时,饱和极化强度、剩余极化强度和矫顽场的衰减幅度分别为14.1%,15.0%和2.7%,样片抗总剂量辐照能力可达1×108rad(Si).