Author Affiliations
Abstract
1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Colloidal CdSe quantum dots (QDs) are promising materials for solar cells because of their simple preparation process and compatibility with flexible substrates. The QD radiative recombination lifetime has attracted enormous attention as it affects the probability of photogenerated charges leaving the QDs and being collected at the battery electrodes. However, the scaling law for the exciton radiative lifetime in CdSe QDs is still a puzzle. This article presents a novel explanation that reconciles this controversy. Our calculations agree with the experimental measurements of all three divergent trends in a broadened energy window. Further, we proved that the exciton radiative lifetime is a consequence of the thermal average of decays for all thermally accessible exciton states. Each of the contradictory size-dependent patterns reflects this trend in a specific size range. As the optical band gap increases, the radiative lifetime decreases in larger QDs, increases in smaller QDs, and is weakly dependent on size in the intermediate energy region. This study addresses the inconsistencies in the scaling law of the exciton lifetime and gives a unified interpretation over a widened framework. Moreover, it provides valuable guidance for carrier separation in the thin film solar cell of CdSe QDs.Colloidal CdSe quantum dots (QDs) are promising materials for solar cells because of their simple preparation process and compatibility with flexible substrates. The QD radiative recombination lifetime has attracted enormous attention as it affects the probability of photogenerated charges leaving the QDs and being collected at the battery electrodes. However, the scaling law for the exciton radiative lifetime in CdSe QDs is still a puzzle. This article presents a novel explanation that reconciles this controversy. Our calculations agree with the experimental measurements of all three divergent trends in a broadened energy window. Further, we proved that the exciton radiative lifetime is a consequence of the thermal average of decays for all thermally accessible exciton states. Each of the contradictory size-dependent patterns reflects this trend in a specific size range. As the optical band gap increases, the radiative lifetime decreases in larger QDs, increases in smaller QDs, and is weakly dependent on size in the intermediate energy region. This study addresses the inconsistencies in the scaling law of the exciton lifetime and gives a unified interpretation over a widened framework. Moreover, it provides valuable guidance for carrier separation in the thin film solar cell of CdSe QDs.
solar cells CdSe quantum dot radiative lifetime scaling law optical band gap exciton fine structure room temperature 
Journal of Semiconductors
2023, 44(3): 032702
作者单位
摘要
长春理工大学高功率半导体激光国家重点实验室, 吉林 长春 130022
为了探究量子点敏化对GaAs衬底发光性能的影响,采用化学沉积法制备了CdSe量子点,将量子点沉积在GaAs衬底上进行敏化。采用X射线衍射测试确认物相,利用扫描电子显微镜对量子点的形貌进行表征,并通过荧光光谱测试对CdSe量子点敏化后的GaAs衬底样品与未敏化的样品进行对比。结果表明:所制备的CdSe量子点大小均匀,尺寸约为20 nm,且均匀地附着在GaAs衬底上,CdSe量子点/GaAs形成了Ⅱ型能带结构。量子点敏化使GaAs衬底表面的载流子浓度升高。通过荧光光谱测试对各发光峰的来源进行了分析。测试数据显示,与敏化前相比,敏化后的GaAs衬底带边发光增强了2.25倍,缺陷发光增强了3倍。
光谱学 CdSe量子点敏化 GaAs 光致发光 Ⅱ型能带结构; 
中国激光
2019, 46(8): 0811002
作者单位
摘要
1 贵州大学物理学院, 贵州 贵阳 550025
2 贵州大学贵州省光电子技术及应用重点实验室, 贵州 贵阳 550025
3 贵州大学大数据与信息工程学院, 贵州 贵阳 550025
利用羧基修饰的CdSe量子点与氨基包覆的金纳米粒子之间的静电相互作用构建了金纳米粒子/CdSe量子点荧光共振能量转移(FRET)体系,研究了CdSe量子点与Au纳米粒子间距变化下该体系的荧光变化。结果表明,相互作用荧光强度和FRET效率均随间距的增大而减小,此变化规律与Frster能量共振转移理论给出的一致。
物理光学 荧光 CdSe量子点 金纳米粒子 Fster共振能量转移 
激光与光电子学进展
2018, 55(7): 072601
作者单位
摘要
浙江工业大学激光与光电子技术研究所, 浙江 杭州 310023
塑料光纤在成本、光纤到户和短距离通信等方面与石英光纤相比具有优越性。在塑料光纤基底中掺入某些光放大介质(如量子点),可以制备出塑料光纤放大器。目前,对于量子点掺杂的塑料光纤材料的光学性能的研究还很少。报导了一种以聚甲基丙烯酸甲酯(PMMA)为基底的CdSe量子点光纤材料CdSe/PMMA。紫外可见近红外吸收谱以及荧光辐射谱测量表明,制备的CdSe量子点的尺寸单分散性较好,CdSe/PMMA的发射峰比CdSe的发射峰宽,其半峰全宽加宽了约10 nm。在波长为473 nm的激光持续照射下,CdSe/PMMA的荧光辐射强度不断增强,约12 h后发光强度趋稳,峰值强度增加约1倍,同时,荧光峰值波长出现蓝移,约25 nm,没有回复现象。由于CdSe/PMMA具有强荧光辐射和宽光谱的特点,因此有可能是一种较为理想的宽光谱光纤基底材料。
材料 纤芯基底材料 CdSe量子点 聚甲基丙烯酸甲酯 荧光增强 蓝移 
光学学报
2011, 31(3): 0316002

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!