Author Affiliations
Abstract
National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
Ultraviolet (UV) detectors with large photosensitive areas are more advantageous in low-level UV detection applications. In this Letter, high-performance 4H-SiC p-i-n avalanche photodiodes (APDs) with large active area (800 μm diameter) are reported. With the optimized epitaxial structure and device fabrication process, a high multiplication gain of 1.4 × 106 is obtained for the devices at room temperature, and the dark current is as low as ~10 pA at low reverse voltages. In addition, record external quantum efficiency of 85.5% at 274 nm is achieved, which is the highest value for the reported SiC APDs. Furthermore, the rejection ratio of UV to visible light reaches about 104. The excellent performance of our devices indicates a tremendous improvement for large-area SiC APD-based UV detectors. Finally, the UV imaging performance of our fabricated 4H-SiC p-i-n APDs is also demonstrated for system-level applications.
040.1345 Avalanche photodiodes (APDs) 040.7190 Ultraviolet 040.6070 Solid state detectors 230.5160 Photodetectors Chinese Optics Letters
2019, 17(9): 090401
Author Affiliations
Abstract
National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
In this Letter, we report large-area (600 μm diameter) 4H-SiC avalanche photodiodes (APDs) with high gain and low dark current for visible-blind ultraviolet detection. Based on the separate absorption and multiplication structure, 4H-SiC APDs passivated with SiNx instead of SiO2 are demonstrated for the first time, to the best of our knowledge. Benefitting from the SiNx passivation, the surface leakage current is effectively suppressed. At room temperature, high multiplication gain of 6.5×105 and low dark current density of 0.88 μA/cm2 at the gain of 1000 are achieved for our devices, which are comparable to the previously reported small-area SiC APDs.
040.1345 Avalanche photodiodes (APDs) 040.7190 Ultraviolet 040.6070 Solid state detectors Chinese Optics Letters
2018, 16(6): 060401
Author Affiliations
Abstract
State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
Property of the phase of the reemitted field in the semiconductor quantum wells (QWs) excited by femtosecond pulse train is investigated. It is shown that the phase evolution of the reemitted field is controlled by the relative phase between the successive pulses of the incident train. For all the odd pulses excitation, the reemitted field is from out-of-phase to in-phase, then again to out-of-phase with the incident pulses, whereas for all the even pulses excitation, the situation is the opposite, i.e., it is from in-phase to out-of-phase, then again to in-phase with the incident pulses.
脉冲波列 量子阱 再发射场 相对相位 040.6070 Solid state detectors 140.0140 Lasers and laser optics 190.0190 Nonlinear optics 320.0320 Ultrafast optics Chinese Optics Letters
2007, 5(5): 304