Author Affiliations
Abstract
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 2018002 Graduate University of Chinese Academy of Sciences, Beijing 1000493 State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027
The femtosecond laser induced void array inside Al2O3 crystals was discussed. The void array was formed spontaneously under the irradiation of a single beam of infrared femtosecond laser which was focused at a fixed point inside the Al2O3 crystal sample. It was found that the regular voids only could be fabricated near the sample surface, which was different from the situation in CaF2 single crystal reported before. The possible mechanism of the phenomena was also discussed.
微米点阵 飞秒激光 氧化铝晶体 140.7090 Ultrafast lasers 320.7130 Ultrafast processes in condensed matter, including semiconductors Chinese Optics Letters
2008, 6(5): 388
