研究了金纳米颗粒局域表面等离激元共振耦合效应, 并实现了砷化镓薄膜的近场发光增强.通过理论计算金纳米颗粒的吸收光谱及电场分布, 分析金属纳米颗粒形貌尺寸的改变对等离激元共振频率调控及局域场增强效果的影响, 模拟半径为50 nm的金颗粒并实现了35倍近场增强效果.通过对双球型的模拟, 分析了一种金纳米颗粒增强GaAs的积极方式, 即密集颗粒之间的近场耦合形成的“hotspots”.此外, 研究了不同溅射时间及快速退火对金纳米颗粒吸收特性的影响, 发现金纳米颗粒吸收峰位主要位于560~680 nm波段, 而且随着溅射时间的增加发生红移现象.经过快速退火处理后, 金纳米颗粒吸收峰位蓝移到510~550 nm波段, 形成与532 nm激发波长相匹配的共振吸收峰.最后, 实现砷化镓薄膜9.6倍的光致发光增强.

The near field luminescence enhancement of gallium arsenide thin films was achieved by studying the local surface plasmon resonance coupling effect of gold nanoparticles. By calculating the absorption spectrum and electric field distribution of gold nanoparticles theoretically, the effects of changing the shape and size of metal nanoparticles on the regulation of plasmon resonance frequency and local field enhancement were analyzed. A near field enhancement effect of 35 times was achieved by simulating gold nanoparticles with a radius of 50 nm. Through the simulation of double sphere shape, an active way of gold particle enhanced GaAs was analyzed, that is, the coupling between dense particles, forming "hotspots" and accompanying the enhancement effect of local field. In addition, the effects of sputtering time and rapid annealing on the absorption characteristics of gold nanoparticles were investigated. The absorption peak of the nanoparticles is mainly located in the 560~680 nm band. Moreover, the red shift occurs with the increasing of sputtering time. After rapid annealing, the absorption peak of gold nanoparticles shifts blue to 510~550 nm band, forming a resonance absorption peak matching the excitation wavelength of 532 nm. Finally, the photoluminescence of gallium arsenide thin film is enhanced by 9.6 times.