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Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection

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Abstract

In this work, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is demonstrated. With an optimized implantation and annealing process, a p-GaN layer and corresponding GaN p-i-n photodiode are achieved via Mg implantation. As revealed in the UV detection characterizations, these diodes exhibit a sharp wavelength cutoff at 365?nm, high UV/visible rejection ratio of 1.2×104, and high photoresponsivity of 0.35?A/W, and are proved to be comparable with commercially available GaN p-n photodiodes. Additionally, a localized states-related gain mechanism is systematically investigated, and a relevant physics model of electric-field-assisted photocarrier hopping is proposed. The demonstrated Mg ion-implantation-based approach is believed to be an applicable and CMOS-process-compatible technology for GaN-based p-i-n photodiodes.

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DOI:10.1364/PRJ.7.000B48

所属栏目:Semiconductor UV Photonics

基金项目:National Key R&D Program of China; National Natural Science Foundation of China (NSFC)10.13039/501100001809; Natural Science Foundation of Jiangsu Province10.13039/501100004608; Fundamental Research Funds for the Central Universities10.13039/501100012226; Priority Academic Program Development of Jiangsu Higher Education Institutions; Science and Technology Project of State Grid Corporation of China;

收稿日期:2019-02-04

录用日期:2019-05-29

网络出版日期:2019-07-12

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Weizong Xu:School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, Chinae-mail: wz.xu@nju.edu.cn
Yating Shi:School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Fangfang Ren:School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Dong Zhou:School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Linlin Su:School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Qing Liu:School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Liang Cheng:School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Jiandong Ye:School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Dunjun Chen:School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Rong Zhang:School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Youdou Zheng:School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Hai Lu:School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, Chinae-mail: hailu@nju.edu.cn

联系人作者:Weizong Xu, Hai Lu(wz.xu@nju.edu.cn, hailu@nju.edu.cn)

备注:National Key R&D Program of China; National Natural Science Foundation of China (NSFC)10.13039/501100001809; Natural Science Foundation of Jiangsu Province10.13039/501100004608; Fundamental Research Funds for the Central Universities10.13039/501100012226; Priority Academic Program Development of Jiangsu Higher Education Institutions; Science and Technology Project of State Grid Corporation of China;

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引用该论文

Weizong Xu, Yating Shi, Fangfang Ren, Dong Zhou, Linlin Su, Qing Liu, Liang Cheng, Jiandong Ye, Dunjun Chen, Rong Zhang, Youdou Zheng, and Hai Lu, "Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection," Photonics Research 7(8), B48 (2019)

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