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基于激光诱导击穿光谱技术的铜铟镓硒薄膜中元素含量比的快速定量分析方法

Rapid Quantitative Analysis of Element Content Ratios in Cu(In,Ga)Se2 Thin Films Using Laser-Induced Breakdown Spectroscopy

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摘要

采用单靶磁控溅射方法在不同溅射时间下制备了铜铟镓硒薄膜,并且利用激光诱导击穿光谱技术实现对铜铟镓硒薄膜中元素含量比的快速定量分析。结果表明:随着溅射时间延长,Ga与(In+Ga)的谱线强度比值以及薄膜的禁带宽度同步变化,均呈先减小后增大的规律;铜铟镓硒薄膜的激光诱导击穿光谱图以及谱线分析、几种元素辐射强度比值的快速定量分析都表明,激光诱导击穿光谱技术能够间接地实现对铜铟镓硒薄膜中元素含量比的快速检测,能够在铜铟镓硒薄膜的性能分析以及制备参数优化方面发挥辅助作用。

Abstract

Herein, the single-target magnetron sputtering method is used to prepare Cu(In,Ga)Se2 thin films at various sputtering times, and rapid quantitative analysis of elemental content ratios of the Cu(In,Ga)Se2 thin films is performed using laser-induced breakdown spectroscopy. Results show that the ratio of the Ga/(In+Ga) spectral line intensities and the forbidden bandwidth of the film vary synchronously. As the sputtering time increases, both parameters initially decrease and subsequently increase. This shows the potential of LIBS in the field of metal thin film analysis; it can play an auxiliary role in the performance analysis of Cu(In,Ga)Se2 thin films and the optimization of preparation parameters.

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DOI:10.3788/CJL201946.0911001

所属栏目:光谱学

基金项目:国家自然科学基金、山东省自然科学基金;

收稿日期:2019-03-05

修改稿日期:2019-05-06

网络出版日期:2019-09-01

作者单位    点击查看

刘世明:山东理工大学物理与光电工程学院, 山东 淄博 255049
修俊山:山东理工大学物理与光电工程学院, 山东 淄博 255049
刘云燕:山东理工大学物理与光电工程学院, 山东 淄博 255049

联系人作者:修俊山(xiujunshan@126.com)

备注:国家自然科学基金、山东省自然科学基金;

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引用该论文

Shiming Liu,Junshan Xiu,Yunyan Liu. Rapid Quantitative Analysis of Element Content Ratios in Cu(In,Ga)Se2 Thin Films Using Laser-Induced Breakdown Spectroscopy[J]. Chinese Journal of Lasers, 2019, 46(9): 0911001

刘世明,修俊山,刘云燕. 基于激光诱导击穿光谱技术的铜铟镓硒薄膜中元素含量比的快速定量分析方法[J]. 中国激光, 2019, 46(9): 0911001

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