金属电阻是影响大尺寸TFT-LCD信号延迟的关键因素。研究了利用低电阻率金属Al制作大尺寸TFT阵列信号线的生产工艺,发现在完成有源半导体层刻蚀后残留的少量Cl2会在后续工艺中对金属Al造成腐蚀,严重地影响了产品的性能。通过优化刻蚀工艺,采用活性更高的SF6去除刻蚀有源半导体层时残留的少量Cl2,避免了金属Al腐蚀的发生。

Low resistant metal is one of key factors in delay-time of large TFT-LCD. In this article low resistant metal aluminum has been investigated. After a-Si island etch process,it is found that remained Cl2 had eroded aluminum. This has severity influence on products. By optimizing the etch process,more active SF6 can remove remained Cl2 in a-Si island etch process. So aluminum erodibility can be avoided.