在LED电极欧姆接触中，载流子在金属电极和半导体间有不同的传输机制。通过载流子在金属半导体界面传输机制的模拟，讨论了界面介质层及其势垒对器件串联电阻和漏电流的影响，发现介质层电阻比LED的串联电阻小得多，可以忽略不计；但是随着器件的老化，介质层及其所含的缺陷会产生相当大的漏电流，使器件的可靠性和稳定性下降，也为LED的失效机理提供了理论依据。

In the Ohmic contacts of LED electrodes,carriers have different transmission mechanisms between metal electrode and semiconductor. By simulating transferring mechanism of carriers in metalsemiconductor interface,the impact of the interfacial layer and barrier potential on series resistance and leakage current of LED is discussed. Resistance of interfacial layer can be ignored comparing with LED's series resistance because it is very small. With the aging of the LED,the interfacial layer and defects can result in very serious leakage current,let reliability and stability come down,and also provide the theory basis to the LED invalid mechanism.