液晶与显示, 2010, 25 (5): 706, 网络出版: 2010-11-04  

不同氧气分压下的MOCVD法氧化锌薄膜生长

Zinc Oxide Films Growth by MOCVD Under Different Oxygen Partial Pressures
作者单位
吉林建筑工程学院电气与电子信息工程学院, 吉林 长春 130021
摘要
采用金属有机化学气相沉积方法, 在不同氧气分压下, 对硅衬底氧化锌薄膜材料生长做了研究。X射线衍射方法对氧化锌薄膜的结晶质量做了比对测试。测试结果表明薄膜是沿着(002)方向生长。利用光荧光谱测试分析, 对薄膜的发光特性做了研究, 研究发现随着氧气分压增大, 薄膜的紫外发光峰增强。通过原子力显微镜测试, 对薄膜的表面形貌做了观察, 发现结晶颗粒的平均粗糙度、均方根, 以及平均直径随着氧气分压的增大呈现逐渐变小的趋势。
Abstract
ZnO thin films were grown on Si substrates by metal-organic chemical vapor deposition under different oxygen partial pressures, and the properties of the films were studied. It was found sharp diffraction peaks for ZnO(002)by X-ray diffraction, indicating the films were highly c-axis-oriented. The photoluminescence spectra of the ZnO films were studied. The surface morphology was studied by the atomic force microscopy. It was found that the ZnO films grew in a column-by-column process. The average grain size and the root-meansquare values for the film-surface morphology were decreasing with the increasing oxygen partial pressure.

赵春雷, 杨小天, 王超, 唐魏, 杨佳, 高晓红. 不同氧气分压下的MOCVD法氧化锌薄膜生长[J]. 液晶与显示, 2010, 25(5): 706. ZHAO Cun-lei, YANG Xiao-tian, WANG Chao, TANG Wei, YANG Jia, GAO Xiao-hong. Zinc Oxide Films Growth by MOCVD Under Different Oxygen Partial Pressures[J]. Chinese Journal of Liquid Crystals and Displays, 2010, 25(5): 706.

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